Impact of AlOx Capping Layer Thickness for Edge Passivation of TOPCon2 Shingle Solar Cell

This work aims at understanding the short circuit current density losses observed on TOPCon² solar cells after AlOx layer deposition and annealing. This process is the most considered for edge passivation of shingle solar cell, who suffer from heavy edge recombination losses after cutting procedure...

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Bibliographic Details
Main Authors: Franck Dhainaut, Thibaut Desrues, Benoit Martel, Mickael Albaric, Olivier Palais
Format: Article
Language:English
Published: TIB Open Publishing 2025-05-01
Series:SiliconPV Conference Proceedings
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Online Access:https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1308
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Summary:This work aims at understanding the short circuit current density losses observed on TOPCon² solar cells after AlOx layer deposition and annealing. This process is the most considered for edge passivation of shingle solar cell, who suffer from heavy edge recombination losses after cutting procedures. Our solar cells feature Transparent Conductive Oxide (TCO) layers at the front and rear sides, on top of which the AlOx edge passivation layer is deposited during Atomic Layer Deposition (ALD) process. We focus on the effect of the AlOx layer thickness and the annealing conditions on the optical and electrical properties of the front AlOx/TCO stack. It is found that annealing of thick AlOx layers induce an increase of free carriers’ concentration in the TCO layer, resulting in additional parasitic absorption. Thinner AlOx layer and/or cooler annealing condition would limit this phenomenon, however rising a compromise with the shingle edge passivation goal. Indeed, we see that applicated on the TOPCon² shingle solar cells, less current density loss comes along lower edge passivation level.
ISSN:2940-2123