Field-free spin hall oscillator based on giant magnetoresistance effect and its potential for electrical synchronization
Abstract Spin Hall nano oscillators (SHNOs) have attracted much attention in recent years due to their great potential for applications in neuromorphic computation. However, the output power of SHNOs is very low and an external magnetic field is required to generate microwave signal continuously, wh...
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| Language: | English |
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Nature Portfolio
2025-02-01
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| Series: | Scientific Reports |
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| Online Access: | https://doi.org/10.1038/s41598-025-90627-7 |
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| author | Jialin Shi Guoshuo Peng Chenglong Zhang Zhenhu Jin Jiamin Chen |
| author_facet | Jialin Shi Guoshuo Peng Chenglong Zhang Zhenhu Jin Jiamin Chen |
| author_sort | Jialin Shi |
| collection | DOAJ |
| description | Abstract Spin Hall nano oscillators (SHNOs) have attracted much attention in recent years due to their great potential for applications in neuromorphic computation. However, the output power of SHNOs is very low and an external magnetic field is required to generate microwave signal continuously, which hinders the further development of SHNOs. In order to solve the two problems, we propose a new-type SHNO based on the giant magnetoresistance (GMR) effect, while retaining the advantage of the simple fabrication process of the conventional oscillator. The huge magnetoresistance ratio provided by the GMR effect can increase the power of this novel oscillator by several orders of magnitude. In addition, by designing the magnetization easy axis of the free and reference layers in the GMR film layers, this novel oscillator can operate effectively without the need of and external magnetic field. Furthermore, we have preliminarily investigated the feasibility of electrical synchronization in the field of SHNOs from the perspective of microspin simulation and found that parallel connection can provide stronger coupling strength compared with series connection. Our research solves the core problems that currently hinder the further development of SHNOs, facilitating the realization and application of large-scale synchronized array of SHNOs. |
| format | Article |
| id | doaj-art-ac641fee73f748d4bea6a92b71c452fd |
| institution | OA Journals |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-ac641fee73f748d4bea6a92b71c452fd2025-08-20T02:01:35ZengNature PortfolioScientific Reports2045-23222025-02-0115111010.1038/s41598-025-90627-7Field-free spin hall oscillator based on giant magnetoresistance effect and its potential for electrical synchronizationJialin Shi0Guoshuo Peng1Chenglong Zhang2Zhenhu Jin3Jiamin Chen4State Key Laboratory of Transducer Technology, Aerospace Information Research Institute (AIR), Chinese Academy of SciencesState Key Laboratory of Transducer Technology, Aerospace Information Research Institute (AIR), Chinese Academy of SciencesState Key Laboratory of Transducer Technology, Aerospace Information Research Institute (AIR), Chinese Academy of SciencesState Key Laboratory of Transducer Technology, Aerospace Information Research Institute (AIR), Chinese Academy of SciencesState Key Laboratory of Transducer Technology, Aerospace Information Research Institute (AIR), Chinese Academy of SciencesAbstract Spin Hall nano oscillators (SHNOs) have attracted much attention in recent years due to their great potential for applications in neuromorphic computation. However, the output power of SHNOs is very low and an external magnetic field is required to generate microwave signal continuously, which hinders the further development of SHNOs. In order to solve the two problems, we propose a new-type SHNO based on the giant magnetoresistance (GMR) effect, while retaining the advantage of the simple fabrication process of the conventional oscillator. The huge magnetoresistance ratio provided by the GMR effect can increase the power of this novel oscillator by several orders of magnitude. In addition, by designing the magnetization easy axis of the free and reference layers in the GMR film layers, this novel oscillator can operate effectively without the need of and external magnetic field. Furthermore, we have preliminarily investigated the feasibility of electrical synchronization in the field of SHNOs from the perspective of microspin simulation and found that parallel connection can provide stronger coupling strength compared with series connection. Our research solves the core problems that currently hinder the further development of SHNOs, facilitating the realization and application of large-scale synchronized array of SHNOs.https://doi.org/10.1038/s41598-025-90627-7Spin Hall nano oscillatorField freeHigh powerElectrical synchronization |
| spellingShingle | Jialin Shi Guoshuo Peng Chenglong Zhang Zhenhu Jin Jiamin Chen Field-free spin hall oscillator based on giant magnetoresistance effect and its potential for electrical synchronization Scientific Reports Spin Hall nano oscillator Field free High power Electrical synchronization |
| title | Field-free spin hall oscillator based on giant magnetoresistance effect and its potential for electrical synchronization |
| title_full | Field-free spin hall oscillator based on giant magnetoresistance effect and its potential for electrical synchronization |
| title_fullStr | Field-free spin hall oscillator based on giant magnetoresistance effect and its potential for electrical synchronization |
| title_full_unstemmed | Field-free spin hall oscillator based on giant magnetoresistance effect and its potential for electrical synchronization |
| title_short | Field-free spin hall oscillator based on giant magnetoresistance effect and its potential for electrical synchronization |
| title_sort | field free spin hall oscillator based on giant magnetoresistance effect and its potential for electrical synchronization |
| topic | Spin Hall nano oscillator Field free High power Electrical synchronization |
| url | https://doi.org/10.1038/s41598-025-90627-7 |
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