Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays
Abstract Photodetectors play a crucial role in converting light signals into electrical signals and have significant applications in various fields such as communications, imaging, and sensing. However, the fabrication of a photodetector is a complex process that involves precise control of surface...
Saved in:
| Main Authors: | Pengxiang Sun, Xun Yang, Kexue Li, Zhipeng Wei, Wei Fan, Shaoyi Wang, Weimin Zhou, Chongxin Shan |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-01-01
|
| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202300371 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Enhanced Responsivity of GaN Metal–Semiconductor–Metal (MSM) Photodetectors on GaN Substrate
by: Siyi Chang, et al.
Published: (2017-01-01) -
Adsorption Characteristics of an AlGaN/GaN Heterojunction on Potassium Ions
by: Yan Dong, et al.
Published: (2025-06-01) -
Novel Bidirectional ESD Circuit for GaN HEMT
by: Pengfei Zhang, et al.
Published: (2025-01-01) -
AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz
by: Toshihiro Ohki, et al.
Published: (2025-01-01) -
TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs
by: Franco Ercolano, et al.
Published: (2025-03-01)