Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays
Abstract Photodetectors play a crucial role in converting light signals into electrical signals and have significant applications in various fields such as communications, imaging, and sensing. However, the fabrication of a photodetector is a complex process that involves precise control of surface...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-01-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202300371 |
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| Summary: | Abstract Photodetectors play a crucial role in converting light signals into electrical signals and have significant applications in various fields such as communications, imaging, and sensing. However, the fabrication of a photodetector is a complex process that involves precise control of surface preparation, lithography, and deposition techniques. Here the study demonstrates that GaN/Ga2O3 heterojunctions can be fabricated utilizing laser processing to transform the surface of GaN into Ga2O3. The GaN/Ga2O3 heterojunctions exhibit good reproducibility, uniformity, and ability to operate under zero bias, with a responsivity of 110.22 mA W−1, a detection rate of 5.56 × 1011 jones, and an external quantum efficiency of 42.34%. Moreover, an 8 × 8 photodetector array based on GaN/Ga2O3 heterojunction is fabricated via laser writing and is demonstrated to have ultraviolet imaging capabilities. This report presents the pioneering fabrication of a photodetector array using laser writing. The findings offer a versatile and scalable approach for the production of large‐area heterojunction photodetector arrays. |
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| ISSN: | 2196-7350 |