Reduction of Oxygen Impurity in Multicrystalline Silicon Production

Effective control of oxygen impurity in multicrystalline silicon is required for the production of a high-quality crystal. The basic principle and some techniques for reducing oxygen impurity in multicrystalline silicon during the unidirectional solidification process are described in this paper. Th...

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Bibliographic Details
Main Authors: Bing Gao, Satoshi Nakano, Koichi Kakimoto
Format: Article
Language:English
Published: Wiley 2013-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2013/908786
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