Measurement of interfacial adhesion strength of Copper-Silicon based dielectric interfaces via laser spallation test
In this study, the interfacial adhesion strength between copper (Cu) and dielectric films was investigated using laser spallation test. To quantitatively evaluate the interfacial strength, the compressive stress wave generated by laser pulse was precisely calibrated, and interface stress was analyze...
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Elsevier
2025-08-01
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| Series: | Applied Surface Science Advances |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666523925000911 |
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| author | Young-Min Ju Dukyong Kim Se-Min Lee Heuisu Kim Daewoong Lee Yeon-Taek Hwang Seung Hwan Lee Hak-Sung Kim |
| author_facet | Young-Min Ju Dukyong Kim Se-Min Lee Heuisu Kim Daewoong Lee Yeon-Taek Hwang Seung Hwan Lee Hak-Sung Kim |
| author_sort | Young-Min Ju |
| collection | DOAJ |
| description | In this study, the interfacial adhesion strength between copper (Cu) and dielectric films was investigated using laser spallation test. To quantitatively evaluate the interfacial strength, the compressive stress wave generated by laser pulse was precisely calibrated, and interface stress was analyzed through wave propagation simulation. The highest adhesion strength was observed in plasma-enhanced chemical vapor deposition (PECVD) silicon oxide (63.57±11.31 MPa), followed by PECVD silicon nitride (53.95±12.04 MPa) and low-pressure chemical vapor deposition (LPCVD) silicon nitride (26.06±6.44 MPa). Scanning electron microscopy with energy dispersive spectroscopy (SEM-EDS) analysis confirmed that failure consistently occurred at the Cu/dielectric interface. The relatively high adhesion of PECVD silicon oxide was attributed to both mechanical and chemical factors. Atomic force microscopy (AFM) analysis revealed its rougher surface enhances mechanical interlocking. In addition, X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analyses confirmed the presence of hydroxyl groups (-OH) at the interface, facilitating Cu oxidation and Cu-O bond formation. Overall, this comprehensive study provides critical understanding for improving Cu/dielectric interfacial reliability in semiconductor devices. |
| format | Article |
| id | doaj-art-abc650d8ad3f48e8be1836c77d0b98f7 |
| institution | Kabale University |
| issn | 2666-5239 |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Applied Surface Science Advances |
| spelling | doaj-art-abc650d8ad3f48e8be1836c77d0b98f72025-08-20T04:01:48ZengElsevierApplied Surface Science Advances2666-52392025-08-012810078310.1016/j.apsadv.2025.100783Measurement of interfacial adhesion strength of Copper-Silicon based dielectric interfaces via laser spallation testYoung-Min Ju0Dukyong Kim1Se-Min Lee2Heuisu Kim3Daewoong Lee4Yeon-Taek Hwang5Seung Hwan Lee6Hak-Sung Kim7Department of Mechanical Engineering, Hanyang University, 222, Seongdong-gu, Seoul 04763, South KoreaDepartment of Mechanical Engineering, Hanyang University, 222, Seongdong-gu, Seoul 04763, South KoreaDepartment of Mechanical Engineering, Hanyang University, 222, Seongdong-gu, Seoul 04763, South KoreaDepartment of Mechanical Engineering, Hanyang University, 222, Seongdong-gu, Seoul 04763, South KoreaSK hynix Inc. Icheon, Gyeonggido, South KoreaSK hynix Inc. Icheon, Gyeonggido, South KoreaDepartment of Mechanical Engineering, Hanyang University, 222, Seongdong-gu, Seoul 04763, South Korea; Hanyang Research Center for Advanced Semiconductor Packaging, Hanyang University, Seoul 04763, South Korea; Co-corresponding authors.Department of Mechanical Engineering, Hanyang University, 222, Seongdong-gu, Seoul 04763, South Korea; Hanyang Research Center for Advanced Semiconductor Packaging, Hanyang University, Seoul 04763, South Korea; Co-corresponding authors.In this study, the interfacial adhesion strength between copper (Cu) and dielectric films was investigated using laser spallation test. To quantitatively evaluate the interfacial strength, the compressive stress wave generated by laser pulse was precisely calibrated, and interface stress was analyzed through wave propagation simulation. The highest adhesion strength was observed in plasma-enhanced chemical vapor deposition (PECVD) silicon oxide (63.57±11.31 MPa), followed by PECVD silicon nitride (53.95±12.04 MPa) and low-pressure chemical vapor deposition (LPCVD) silicon nitride (26.06±6.44 MPa). Scanning electron microscopy with energy dispersive spectroscopy (SEM-EDS) analysis confirmed that failure consistently occurred at the Cu/dielectric interface. The relatively high adhesion of PECVD silicon oxide was attributed to both mechanical and chemical factors. Atomic force microscopy (AFM) analysis revealed its rougher surface enhances mechanical interlocking. In addition, X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analyses confirmed the presence of hydroxyl groups (-OH) at the interface, facilitating Cu oxidation and Cu-O bond formation. Overall, this comprehensive study provides critical understanding for improving Cu/dielectric interfacial reliability in semiconductor devices.http://www.sciencedirect.com/science/article/pii/S2666523925000911Laser spallation testMulti-level metallizationDielectric layerInterfacial strengthDelamination |
| spellingShingle | Young-Min Ju Dukyong Kim Se-Min Lee Heuisu Kim Daewoong Lee Yeon-Taek Hwang Seung Hwan Lee Hak-Sung Kim Measurement of interfacial adhesion strength of Copper-Silicon based dielectric interfaces via laser spallation test Applied Surface Science Advances Laser spallation test Multi-level metallization Dielectric layer Interfacial strength Delamination |
| title | Measurement of interfacial adhesion strength of Copper-Silicon based dielectric interfaces via laser spallation test |
| title_full | Measurement of interfacial adhesion strength of Copper-Silicon based dielectric interfaces via laser spallation test |
| title_fullStr | Measurement of interfacial adhesion strength of Copper-Silicon based dielectric interfaces via laser spallation test |
| title_full_unstemmed | Measurement of interfacial adhesion strength of Copper-Silicon based dielectric interfaces via laser spallation test |
| title_short | Measurement of interfacial adhesion strength of Copper-Silicon based dielectric interfaces via laser spallation test |
| title_sort | measurement of interfacial adhesion strength of copper silicon based dielectric interfaces via laser spallation test |
| topic | Laser spallation test Multi-level metallization Dielectric layer Interfacial strength Delamination |
| url | http://www.sciencedirect.com/science/article/pii/S2666523925000911 |
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