Measurement of interfacial adhesion strength of Copper-Silicon based dielectric interfaces via laser spallation test

Measurement of interfacial adhesion strength of Copper-Silicon based dielectric interfaces via laser spallation test

In this study, the interfacial adhesion strength between copper (Cu) and dielectric films was investigated using laser spallation test. To quantitatively evaluate the interfacial strength, the compressive stress wave generated by laser pulse was precisely calibrated, and interface stress was analyze...

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Bibliographic Details
Main Authors: Young-Min Ju, Dukyong Kim, Se-Min Lee, Heuisu Kim, Daewoong Lee, Yeon-Taek Hwang, Seung Hwan Lee, Hak-Sung Kim
Format: Article
Language:English
Published: Elsevier 2025-08-01
Series:Applied Surface Science Advances
Subjects:
Laser spallation test
Multi-level metallization
Dielectric layer
Interfacial strength
Delamination
Online Access:http://www.sciencedirect.com/science/article/pii/S2666523925000911
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Summary:In this study, the interfacial adhesion strength between copper (Cu) and dielectric films was investigated using laser spallation test. To quantitatively evaluate the interfacial strength, the compressive stress wave generated by laser pulse was precisely calibrated, and interface stress was analyzed through wave propagation simulation. The highest adhesion strength was observed in plasma-enhanced chemical vapor deposition (PECVD) silicon oxide (63.57±11.31 MPa), followed by PECVD silicon nitride (53.95±12.04 MPa) and low-pressure chemical vapor deposition (LPCVD) silicon nitride (26.06±6.44 MPa). Scanning electron microscopy with energy dispersive spectroscopy (SEM-EDS) analysis confirmed that failure consistently occurred at the Cu/dielectric interface. The relatively high adhesion of PECVD silicon oxide was attributed to both mechanical and chemical factors. Atomic force microscopy (AFM) analysis revealed its rougher surface enhances mechanical interlocking. In addition, X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analyses confirmed the presence of hydroxyl groups (-OH) at the interface, facilitating Cu oxidation and Cu-O bond formation. Overall, this comprehensive study provides critical understanding for improving Cu/dielectric interfacial reliability in semiconductor devices.
ISSN:2666-5239

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