Two-Photon Absorption in Twisted Graphene/Hexagonal Boron Nitride Heterojunction Tuned by Vertical Electric Field
We theoretically investigate the comprehensive modulation effect of interlayer twisting and external electric field to the two-photon absorption (TPA) in twisted graphene/hexagonal boron nitride (tG/hBN) heterojunction with small twist angles (2° < θ < 10°) starting from an effective continuum...
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MDPI AG
2025-02-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/15/5/345 |
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| author | Mengping Chen Yingliang Chen Guang Yang Qiwen Wang Xiaobo Feng |
| author_facet | Mengping Chen Yingliang Chen Guang Yang Qiwen Wang Xiaobo Feng |
| author_sort | Mengping Chen |
| collection | DOAJ |
| description | We theoretically investigate the comprehensive modulation effect of interlayer twisting and external electric field to the two-photon absorption (TPA) in twisted graphene/hexagonal boron nitride (tG/hBN) heterojunction with small twist angles (2° < θ < 10°) starting from an effective continuum model. It is found that the TPA of tG/hBN is extended to the visible light band from infrared light band of that in twisted bilayer graphene (tBLG) due to the increase in energy band gap caused by twisting and the potential energy of the boron nitride atomic layer. And the TPA coefficient is enhanced several times via an external electric field, which increases the density of states, leading to an increase transition probability for two-photon absorption. |
| format | Article |
| id | doaj-art-ab6b280ba0504404b7ccc3bf860b4b14 |
| institution | OA Journals |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-ab6b280ba0504404b7ccc3bf860b4b142025-08-20T02:06:12ZengMDPI AGNanomaterials2079-49912025-02-0115534510.3390/nano15050345Two-Photon Absorption in Twisted Graphene/Hexagonal Boron Nitride Heterojunction Tuned by Vertical Electric FieldMengping Chen0Yingliang Chen1Guang Yang2Qiwen Wang3Xiaobo Feng4School of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, ChinaSchool of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, ChinaSchool of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, ChinaSchool of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, ChinaSchool of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, ChinaWe theoretically investigate the comprehensive modulation effect of interlayer twisting and external electric field to the two-photon absorption (TPA) in twisted graphene/hexagonal boron nitride (tG/hBN) heterojunction with small twist angles (2° < θ < 10°) starting from an effective continuum model. It is found that the TPA of tG/hBN is extended to the visible light band from infrared light band of that in twisted bilayer graphene (tBLG) due to the increase in energy band gap caused by twisting and the potential energy of the boron nitride atomic layer. And the TPA coefficient is enhanced several times via an external electric field, which increases the density of states, leading to an increase transition probability for two-photon absorption.https://www.mdpi.com/2079-4991/15/5/345two-photon absorptiongraphene/hexagonal boron nitride heterojunctiontwist anglevertical electric field |
| spellingShingle | Mengping Chen Yingliang Chen Guang Yang Qiwen Wang Xiaobo Feng Two-Photon Absorption in Twisted Graphene/Hexagonal Boron Nitride Heterojunction Tuned by Vertical Electric Field Nanomaterials two-photon absorption graphene/hexagonal boron nitride heterojunction twist angle vertical electric field |
| title | Two-Photon Absorption in Twisted Graphene/Hexagonal Boron Nitride Heterojunction Tuned by Vertical Electric Field |
| title_full | Two-Photon Absorption in Twisted Graphene/Hexagonal Boron Nitride Heterojunction Tuned by Vertical Electric Field |
| title_fullStr | Two-Photon Absorption in Twisted Graphene/Hexagonal Boron Nitride Heterojunction Tuned by Vertical Electric Field |
| title_full_unstemmed | Two-Photon Absorption in Twisted Graphene/Hexagonal Boron Nitride Heterojunction Tuned by Vertical Electric Field |
| title_short | Two-Photon Absorption in Twisted Graphene/Hexagonal Boron Nitride Heterojunction Tuned by Vertical Electric Field |
| title_sort | two photon absorption in twisted graphene hexagonal boron nitride heterojunction tuned by vertical electric field |
| topic | two-photon absorption graphene/hexagonal boron nitride heterojunction twist angle vertical electric field |
| url | https://www.mdpi.com/2079-4991/15/5/345 |
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