Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

In this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures. We reveal an abnormal temperature dependence of threshold voltage instability, suggesting that threshold voltage in...

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Bibliographic Details
Main Authors: Myeongsu Chae, Ho-Young Cha, Hyungtak Kim
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
p-GaN gate HEMTs
threshold voltage instability
positive bias temperature instability (PBTI)
temperature dependence
trapping
de-trapping
Online Access:https://ieeexplore.ieee.org/document/10620298/
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