Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs
In this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures. We reveal an abnormal temperature dependence of threshold voltage instability, suggesting that threshold voltage in...
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10620298/ |
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| author | Myeongsu Chae Ho-Young Cha Hyungtak Kim |
| author_facet | Myeongsu Chae Ho-Young Cha Hyungtak Kim |
| author_sort | Myeongsu Chae |
| collection | DOAJ |
| description | In this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures. We reveal an abnormal temperature dependence of threshold voltage instability, suggesting that threshold voltage instability significant differences at elevated temperatures and is primarily attributed to the trapping/detrapping of charged carriers. Notably, the positive shift in threshold voltage diminished and eventually reversed at low gate bias as the temperature increased. In contrast, the negative shift intensified with increasing temperature but began to mitigate above 100°C at high gate bias due to an enhanced de-trapping process of electrons and holes. These results suggest the presence of multiple mechanisms behind the threshold voltage instability under varying thermal conditions. |
| format | Article |
| id | doaj-art-ab1ad5f573de4b1e8a372aaca85675e0 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-ab1ad5f573de4b1e8a372aaca85675e02025-01-28T00:00:36ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011258158610.1109/JEDS.2024.343682010620298Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTsMyeongsu Chae0https://orcid.org/0000-0002-4432-2365Ho-Young Cha1https://orcid.org/0000-0002-1363-3152Hyungtak Kim2https://orcid.org/0000-0003-4659-1814Department of Electronic and Electrical Engineering, Hongik University, Seoul, Republic of KoreaDepartment of Electronic and Electrical Engineering, Hongik University, Seoul, Republic of KoreaDepartment of Electronic and Electrical Engineering, Hongik University, Seoul, Republic of KoreaIn this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures. We reveal an abnormal temperature dependence of threshold voltage instability, suggesting that threshold voltage instability significant differences at elevated temperatures and is primarily attributed to the trapping/detrapping of charged carriers. Notably, the positive shift in threshold voltage diminished and eventually reversed at low gate bias as the temperature increased. In contrast, the negative shift intensified with increasing temperature but began to mitigate above 100°C at high gate bias due to an enhanced de-trapping process of electrons and holes. These results suggest the presence of multiple mechanisms behind the threshold voltage instability under varying thermal conditions.https://ieeexplore.ieee.org/document/10620298/p-GaN gate HEMTsthreshold voltage instabilitypositive bias temperature instability (PBTI)temperature dependencetrappingde-trapping |
| spellingShingle | Myeongsu Chae Ho-Young Cha Hyungtak Kim Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs IEEE Journal of the Electron Devices Society p-GaN gate HEMTs threshold voltage instability positive bias temperature instability (PBTI) temperature dependence trapping de-trapping |
| title | Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs |
| title_full | Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs |
| title_fullStr | Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs |
| title_full_unstemmed | Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs |
| title_short | Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs |
| title_sort | abnormal temperature and bias dependence of threshold voltage instability in p gan algan gan hemts |
| topic | p-GaN gate HEMTs threshold voltage instability positive bias temperature instability (PBTI) temperature dependence trapping de-trapping |
| url | https://ieeexplore.ieee.org/document/10620298/ |
| work_keys_str_mv | AT myeongsuchae abnormaltemperatureandbiasdependenceofthresholdvoltageinstabilityinpganalganganhemts AT hoyoungcha abnormaltemperatureandbiasdependenceofthresholdvoltageinstabilityinpganalganganhemts AT hyungtakkim abnormaltemperatureandbiasdependenceofthresholdvoltageinstabilityinpganalganganhemts |