Controlling of Differential Resistance of <i>p–n</i>-Junctions of Bipolar Transistor in Active Mode by Method of Impedance Spectroscopy
Controlling of parameters of manufactured transistors and interoperational controlling during their production are necessary conditions for production of competitive products of electronic industry. Traditionally for controlling of bipolar transistors the direct current measurements and registration...
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| Format: | Article |
| Language: | English |
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Belarusian National Technical University
2019-09-01
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| Series: | Приборы и методы измерений |
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| Online Access: | https://pimi.bntu.by/jour/article/view/451 |
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| author | N. I. Gorbachuk N. A. Poklonski Ya. N. Marochkina S. V. Shpakovski |
| author_facet | N. I. Gorbachuk N. A. Poklonski Ya. N. Marochkina S. V. Shpakovski |
| author_sort | N. I. Gorbachuk |
| collection | DOAJ |
| description | Controlling of parameters of manufactured transistors and interoperational controlling during their production are necessary conditions for production of competitive products of electronic industry. Traditionally for controlling of bipolar transistors the direct current measurements and registration of capacity-voltage characteristics are used. Carrying out measurements on alternating current in a wide interval of frequencies (20 Hz–30 MHz) will allow to obtain additional information on parameters of bipolar transistors. The purpose of the work is to show the possibilities of the method of impedance spectroscopy for controlling of differential resistance of p–n-junctions of the bipolar p–n–p-transistor in active mode.The KT814G p–n–p-transistor manufactured by JSC “INTEGRAL” was studied by the method of impedance spectroscopy. The values of differential electrical resistance and capacitance for base–emitter and base–collector p–n-junctions are defi at direct currents in base from 0.8 to 46 µA.The results of the work can be applied to elaboration of techniques of fi checking of discrete bipolar semiconductor devices. |
| format | Article |
| id | doaj-art-aae37640ac7a431d98b23f5ca86abcbd |
| institution | DOAJ |
| issn | 2220-9506 2414-0473 |
| language | English |
| publishDate | 2019-09-01 |
| publisher | Belarusian National Technical University |
| record_format | Article |
| series | Приборы и методы измерений |
| spelling | doaj-art-aae37640ac7a431d98b23f5ca86abcbd2025-08-20T03:22:15ZengBelarusian National Technical UniversityПриборы и методы измерений2220-95062414-04732019-09-0110325326210.21122/2220-9506-2019-10-3-253-262358Controlling of Differential Resistance of <i>p–n</i>-Junctions of Bipolar Transistor in Active Mode by Method of Impedance SpectroscopyN. I. Gorbachuk0N. A. Poklonski1Ya. N. Marochkina2S. V. Shpakovski3Belarusian State UniversityBelarusian State UniversityBelarusian State University“INTEGRAL” JSCControlling of parameters of manufactured transistors and interoperational controlling during their production are necessary conditions for production of competitive products of electronic industry. Traditionally for controlling of bipolar transistors the direct current measurements and registration of capacity-voltage characteristics are used. Carrying out measurements on alternating current in a wide interval of frequencies (20 Hz–30 MHz) will allow to obtain additional information on parameters of bipolar transistors. The purpose of the work is to show the possibilities of the method of impedance spectroscopy for controlling of differential resistance of p–n-junctions of the bipolar p–n–p-transistor in active mode.The KT814G p–n–p-transistor manufactured by JSC “INTEGRAL” was studied by the method of impedance spectroscopy. The values of differential electrical resistance and capacitance for base–emitter and base–collector p–n-junctions are defi at direct currents in base from 0.8 to 46 µA.The results of the work can be applied to elaboration of techniques of fi checking of discrete bipolar semiconductor devices.https://pimi.bntu.by/jour/article/view/451impedance spectroscopytransistornonequilibrium electrons and holesp–n-junctionspace charge region |
| spellingShingle | N. I. Gorbachuk N. A. Poklonski Ya. N. Marochkina S. V. Shpakovski Controlling of Differential Resistance of <i>p–n</i>-Junctions of Bipolar Transistor in Active Mode by Method of Impedance Spectroscopy Приборы и методы измерений impedance spectroscopy transistor nonequilibrium electrons and holes p–n-junction space charge region |
| title | Controlling of Differential Resistance of <i>p–n</i>-Junctions of Bipolar Transistor in Active Mode by Method of Impedance Spectroscopy |
| title_full | Controlling of Differential Resistance of <i>p–n</i>-Junctions of Bipolar Transistor in Active Mode by Method of Impedance Spectroscopy |
| title_fullStr | Controlling of Differential Resistance of <i>p–n</i>-Junctions of Bipolar Transistor in Active Mode by Method of Impedance Spectroscopy |
| title_full_unstemmed | Controlling of Differential Resistance of <i>p–n</i>-Junctions of Bipolar Transistor in Active Mode by Method of Impedance Spectroscopy |
| title_short | Controlling of Differential Resistance of <i>p–n</i>-Junctions of Bipolar Transistor in Active Mode by Method of Impedance Spectroscopy |
| title_sort | controlling of differential resistance of i p n i junctions of bipolar transistor in active mode by method of impedance spectroscopy |
| topic | impedance spectroscopy transistor nonequilibrium electrons and holes p–n-junction space charge region |
| url | https://pimi.bntu.by/jour/article/view/451 |
| work_keys_str_mv | AT nigorbachuk controllingofdifferentialresistanceofipnijunctionsofbipolartransistorinactivemodebymethodofimpedancespectroscopy AT napoklonski controllingofdifferentialresistanceofipnijunctionsofbipolartransistorinactivemodebymethodofimpedancespectroscopy AT yanmarochkina controllingofdifferentialresistanceofipnijunctionsofbipolartransistorinactivemodebymethodofimpedancespectroscopy AT svshpakovski controllingofdifferentialresistanceofipnijunctionsofbipolartransistorinactivemodebymethodofimpedancespectroscopy |