High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors
Edge contact is essential for achieving the ultimate device pitch scaling of stacked nanosheet transistors with monolayer 2-dimensional (2D) channels. However, due to large edge-contact resistance between 2D channels and contact metal, there is currently a lack of high-performance edge-contact devic...
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| Format: | Article |
| Language: | English |
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American Association for the Advancement of Science (AAAS)
2025-01-01
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| Series: | Research |
| Online Access: | https://spj.science.org/doi/10.34133/research.0593 |
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| author | Jiankun Xiao Xiong Xiong Xinhang Shi Shiyuan Liu Shenwu Zhu Yue Zhang Ru Huang Yanqing Wu |
| author_facet | Jiankun Xiao Xiong Xiong Xinhang Shi Shiyuan Liu Shenwu Zhu Yue Zhang Ru Huang Yanqing Wu |
| author_sort | Jiankun Xiao |
| collection | DOAJ |
| description | Edge contact is essential for achieving the ultimate device pitch scaling of stacked nanosheet transistors with monolayer 2-dimensional (2D) channels. However, due to large edge-contact resistance between 2D channels and contact metal, there is currently a lack of high-performance edge-contact device technology for 2D material channels. Here, we report high-performance edge-contact monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) utilizing well-controlled plasma etching techniques. Plasma etching with pure argon improves the edge dangling bonds and thus improves the edge-contact quality. Edge-contact monolayer MoS2 FET shows good ohmic contact even at cryogenic temperatures (20 K), achieving a record-low contact resistance (Rc) of 1.25 kΩ·μm among all edge-contact MoS2 devices. The record-high on-state current of 436 μA/μm and transconductance of 123 μS/μm at Vds = 1 V are achieved on an edge-contact monolayer MoS2 FET with Lch = 120 nm. This work highlights the great potential of edge contacts for high-performance monolayer transition metal dichalcogenide (TMD) material electronics. |
| format | Article |
| id | doaj-art-aa41fb12ddf54b05b1beba0ee4980310 |
| institution | Kabale University |
| issn | 2639-5274 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | American Association for the Advancement of Science (AAAS) |
| record_format | Article |
| series | Research |
| spelling | doaj-art-aa41fb12ddf54b05b1beba0ee49803102025-01-17T08:00:20ZengAmerican Association for the Advancement of Science (AAAS)Research2639-52742025-01-01810.34133/research.0593High-Performance Edge-Contact Monolayer Molybdenum Disulfide TransistorsJiankun Xiao0Xiong Xiong1Xinhang Shi2Shiyuan Liu3Shenwu Zhu4Yue Zhang5Ru Huang6Yanqing Wu7School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing 100871, China.School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing 100871, China.Wuhan National High Magnetic Field Center and School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China.School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing 100871, China.Wuhan National High Magnetic Field Center and School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China.Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China.School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing 100871, China.School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing 100871, China.Edge contact is essential for achieving the ultimate device pitch scaling of stacked nanosheet transistors with monolayer 2-dimensional (2D) channels. However, due to large edge-contact resistance between 2D channels and contact metal, there is currently a lack of high-performance edge-contact device technology for 2D material channels. Here, we report high-performance edge-contact monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) utilizing well-controlled plasma etching techniques. Plasma etching with pure argon improves the edge dangling bonds and thus improves the edge-contact quality. Edge-contact monolayer MoS2 FET shows good ohmic contact even at cryogenic temperatures (20 K), achieving a record-low contact resistance (Rc) of 1.25 kΩ·μm among all edge-contact MoS2 devices. The record-high on-state current of 436 μA/μm and transconductance of 123 μS/μm at Vds = 1 V are achieved on an edge-contact monolayer MoS2 FET with Lch = 120 nm. This work highlights the great potential of edge contacts for high-performance monolayer transition metal dichalcogenide (TMD) material electronics.https://spj.science.org/doi/10.34133/research.0593 |
| spellingShingle | Jiankun Xiao Xiong Xiong Xinhang Shi Shiyuan Liu Shenwu Zhu Yue Zhang Ru Huang Yanqing Wu High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors Research |
| title | High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors |
| title_full | High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors |
| title_fullStr | High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors |
| title_full_unstemmed | High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors |
| title_short | High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors |
| title_sort | high performance edge contact monolayer molybdenum disulfide transistors |
| url | https://spj.science.org/doi/10.34133/research.0593 |
| work_keys_str_mv | AT jiankunxiao highperformanceedgecontactmonolayermolybdenumdisulfidetransistors AT xiongxiong highperformanceedgecontactmonolayermolybdenumdisulfidetransistors AT xinhangshi highperformanceedgecontactmonolayermolybdenumdisulfidetransistors AT shiyuanliu highperformanceedgecontactmonolayermolybdenumdisulfidetransistors AT shenwuzhu highperformanceedgecontactmonolayermolybdenumdisulfidetransistors AT yuezhang highperformanceedgecontactmonolayermolybdenumdisulfidetransistors AT ruhuang highperformanceedgecontactmonolayermolybdenumdisulfidetransistors AT yanqingwu highperformanceedgecontactmonolayermolybdenumdisulfidetransistors |