DERIVATIZATION OF PHOTOACTIVE STRUCTURES SI(N+)/SI(P)/SI(P+) THROUGH ION-BEAM CRYSTALLIZATION
The physical and mathematical mass-transfer model of the ion-beam crystallization method is developed. The derivatization of photoactive structures Si(n+)/Si(p)/Si(p+) on 100 mm substrates through ion-beam crystallization is considered. The optimum conditions for the process: residual pressure in th...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Don State Technical University
2013-09-01
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| Series: | Advanced Engineering Research |
| Subjects: | |
| Online Access: | https://www.vestnik-donstu.ru/jour/article/view/419 |
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| Summary: | The physical and mathematical mass-transfer model of the ion-beam crystallization method is developed. The derivatization of photoactive structures Si(n+)/Si(p)/Si(p+) on 100 mm substrates through ion-beam crystallization is considered. The optimum conditions for the process: residual pressure in the growth chamber — 10−4 Pa; the substrate temperature — 550 °C; ion current density — 2 mA/cm2; acceleration voltage — 400 V; target — substrate distance — 150 mm are determined. The scanning electron microscopy data show that the grown photoactive structures have closely a faultless surface. The results demonstrate that the photoactive structures Si(n+)/Si(p)/Si(p+) offer the external quantum efficiency over 90 % in the wavelength range of 550—900 nm (spectrum AM 1.5) under the following conditions: front layer thickness Si(n+) — 100 nm; donor doping density n+ = 5∙1018 cm−3; layer thickness Si(p) — 130 μm; acceptor doping density p = 2∙1016 cm−3; layer thickness Si(p+) — 500 nm; acceptor doping density p+ = 1∙1018 cm−3. |
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| ISSN: | 2687-1653 |