Applying the carbon materials in TSVs array for enhancing heat transfer performance of three-dimensional integrated circuits
This paper proposed the carbon materials (including MLGNR, MWCNT and SWCNT) to replace the traditional Cu as the filler of through silicon via (TSV) for enhancing heat transfer performance of three-dimensional integrated circuits (3-D ICs), meanwhile the corresponding mathematical model is establish...
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Elsevier
2025-02-01
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Series: | Case Studies in Thermal Engineering |
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Online Access: | http://www.sciencedirect.com/science/article/pii/S2214157X24017568 |
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author | Peng Xu Huan Huang Songjie Zhao Xiushan Liu Fa Zou Chao Li Jun Ai Hui Liu |
author_facet | Peng Xu Huan Huang Songjie Zhao Xiushan Liu Fa Zou Chao Li Jun Ai Hui Liu |
author_sort | Peng Xu |
collection | DOAJ |
description | This paper proposed the carbon materials (including MLGNR, MWCNT and SWCNT) to replace the traditional Cu as the filler of through silicon via (TSV) for enhancing heat transfer performance of three-dimensional integrated circuits (3-D ICs), meanwhile the corresponding mathematical model is established to quickly obtain steady-state temperature of each die layer. The results indicated that the steady-state temperature of 3-D ICs with inserted MLGNR, MWCNT and SWCNT based TSVs array are reduced by 23.315 %, 29.043 % and 38.007 % respectively, as compared with Cu as the filler of TSV. Moreover, it is manifested that the heat transfer performance of 3-D ICs can be further improved by increasing the number and radius of TSV. The corresponding steady-state temperature of the scheme of 5 × 6 TSVs array is 10.415 % lower than that of the scheme of 4 × 4 TSVs array, in the meantime the steady-state temperature can be reduced by 16.016 % when the radius of TSV increases from 1.5 μm to 2.5 μm. Furthermore, it is demonstrated that the processor runtime and memory footprint of our proposed model are 46.938 and 6.771 times lower than COMSOL simulation model, and the maximum error between them is not exceeding 3 %. |
format | Article |
id | doaj-art-a9cc9813b28649d5b8f9aef75fc1097d |
institution | Kabale University |
issn | 2214-157X |
language | English |
publishDate | 2025-02-01 |
publisher | Elsevier |
record_format | Article |
series | Case Studies in Thermal Engineering |
spelling | doaj-art-a9cc9813b28649d5b8f9aef75fc1097d2025-02-02T05:27:16ZengElsevierCase Studies in Thermal Engineering2214-157X2025-02-0166105725Applying the carbon materials in TSVs array for enhancing heat transfer performance of three-dimensional integrated circuitsPeng Xu0Huan Huang1Songjie Zhao2Xiushan Liu3Fa Zou4Chao Li5Jun Ai6Hui Liu7School of Electronics and Information, Guangdong Polytechnic Normal University, Guangzhou, 510665, ChinaSchool of Electronics and Information, Guangdong Polytechnic Normal University, Guangzhou, 510665, ChinaSchool of Electronics and Information, Guangdong Polytechnic Normal University, Guangzhou, 510665, ChinaAssets and Laboratory Management Office, Guangdong Polytechnic Normal University, Guangzhou, 510665, ChinaSchool of Electronics and Information Engineering, South China Normal University, Foshan, 528225, ChinaSchool of Electronics and Information, Guangdong Polytechnic Normal University, Guangzhou, 510665, ChinaGuangzhou Heron Intelligent Equipment Company Limited, Guangzhou, 510990, ChinaSchool of Electronics and Information, Guangdong Polytechnic Normal University, Guangzhou, 510665, China; Corresponding author.This paper proposed the carbon materials (including MLGNR, MWCNT and SWCNT) to replace the traditional Cu as the filler of through silicon via (TSV) for enhancing heat transfer performance of three-dimensional integrated circuits (3-D ICs), meanwhile the corresponding mathematical model is established to quickly obtain steady-state temperature of each die layer. The results indicated that the steady-state temperature of 3-D ICs with inserted MLGNR, MWCNT and SWCNT based TSVs array are reduced by 23.315 %, 29.043 % and 38.007 % respectively, as compared with Cu as the filler of TSV. Moreover, it is manifested that the heat transfer performance of 3-D ICs can be further improved by increasing the number and radius of TSV. The corresponding steady-state temperature of the scheme of 5 × 6 TSVs array is 10.415 % lower than that of the scheme of 4 × 4 TSVs array, in the meantime the steady-state temperature can be reduced by 16.016 % when the radius of TSV increases from 1.5 μm to 2.5 μm. Furthermore, it is demonstrated that the processor runtime and memory footprint of our proposed model are 46.938 and 6.771 times lower than COMSOL simulation model, and the maximum error between them is not exceeding 3 %.http://www.sciencedirect.com/science/article/pii/S2214157X240175683-D ICsTSVs arrayCarbon materialsHeat transfer performance |
spellingShingle | Peng Xu Huan Huang Songjie Zhao Xiushan Liu Fa Zou Chao Li Jun Ai Hui Liu Applying the carbon materials in TSVs array for enhancing heat transfer performance of three-dimensional integrated circuits Case Studies in Thermal Engineering 3-D ICs TSVs array Carbon materials Heat transfer performance |
title | Applying the carbon materials in TSVs array for enhancing heat transfer performance of three-dimensional integrated circuits |
title_full | Applying the carbon materials in TSVs array for enhancing heat transfer performance of three-dimensional integrated circuits |
title_fullStr | Applying the carbon materials in TSVs array for enhancing heat transfer performance of three-dimensional integrated circuits |
title_full_unstemmed | Applying the carbon materials in TSVs array for enhancing heat transfer performance of three-dimensional integrated circuits |
title_short | Applying the carbon materials in TSVs array for enhancing heat transfer performance of three-dimensional integrated circuits |
title_sort | applying the carbon materials in tsvs array for enhancing heat transfer performance of three dimensional integrated circuits |
topic | 3-D ICs TSVs array Carbon materials Heat transfer performance |
url | http://www.sciencedirect.com/science/article/pii/S2214157X24017568 |
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