Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress
In this paper, the degradation behavior of the electrical characteristics was investigated, and trap analysis based on low-frequency noise (LFN) was carried out for the commercial 1.2-kV /30-A silicon carbide (SiC) power MOSFETs under repetitive short-circuit (SC) stress. The experiment results show...
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2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/8981958/ |
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| author | J. L. Wang Y. Q. Chen J. T. Feng X. B. Xu Y. F. En B. Hou R. Gao Y. Chen Y. Huang K. W. Geng |
| author_facet | J. L. Wang Y. Q. Chen J. T. Feng X. B. Xu Y. F. En B. Hou R. Gao Y. Chen Y. Huang K. W. Geng |
| author_sort | J. L. Wang |
| collection | DOAJ |
| description | In this paper, the degradation behavior of the electrical characteristics was investigated, and trap analysis based on low-frequency noise (LFN) was carried out for the commercial 1.2-kV /30-A silicon carbide (SiC) power MOSFETs under repetitive short-circuit (SC) stress. The experiment results show that the on-state resistance (<inline-formula> <tex-math notation="LaTeX">${R} _{\mathrm{ dson}}$ </tex-math></inline-formula>) and threshold voltage (<inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ th}}$ </tex-math></inline-formula>) increase significantly. Meanwhile, the drain-source current (<inline-formula> <tex-math notation="LaTeX">${I} _{\mathrm{ ds}}$ </tex-math></inline-formula>) decreases obviously with the increase of the SC cycles. Furthermore, the gate-source leakage current (<inline-formula> <tex-math notation="LaTeX">${I} _{\mathrm{ gss}}$ </tex-math></inline-formula>) of the SiC power MOSFETs increase greatly and the blocking characteristics deteriorated after 1000 SC cycles. The positive shift was observed on the gate-capacitance versus gate-voltage (<inline-formula> <tex-math notation="LaTeX">${C} _{\mathrm{ g}}$ </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ g}}$ </tex-math></inline-formula>) curve, which shows that the damage region could be in channel along the SiC/SiO<sub>2</sub> interface after repetitive SC stress. In order to obtain the trap information, trap characterization was performed by using LFN method, and the LFN results show that the trap density increases with the SC cycles. The physical mechanism could be attributed to electrically active traps generated at SiC/SiO<sub>2</sub> interface and oxide layer due to the peak ionization rate, the perpendicular electrical field and high temperature during SC stress. The study may be useful to provide reference for converters design and fault protection of SiC power MOSFETs. |
| format | Article |
| id | doaj-art-a9c0c1ff0c1d454489757fc11637f4cc |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-a9c0c1ff0c1d454489757fc11637f4cc2025-08-22T23:09:16ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01814515110.1109/JEDS.2020.29712458981958Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit StressJ. L. Wang0https://orcid.org/0000-0001-5599-0548Y. Q. Chen1https://orcid.org/0000-0001-6901-3000J. T. Feng2https://orcid.org/0000-0002-9377-5264X. B. Xu3Y. F. En4https://orcid.org/0000-0002-9038-8103B. Hou5R. Gao6https://orcid.org/0000-0001-7400-3931Y. Chen7https://orcid.org/0000-0002-9357-2344Y. Huang8K. W. Geng9Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, Guangzhou, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, Guangzhou, ChinaSchool of Electronic and Information Engineering, South China University of Technology, Guangzhou, ChinaSchool of Electronic and Information Engineering, South China University of Technology, Guangzhou, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, Guangzhou, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, Guangzhou, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, Guangzhou, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, Guangzhou, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, Guangzhou, ChinaSchool of Electronic and Information Engineering, South China University of Technology, Guangzhou, ChinaIn this paper, the degradation behavior of the electrical characteristics was investigated, and trap analysis based on low-frequency noise (LFN) was carried out for the commercial 1.2-kV /30-A silicon carbide (SiC) power MOSFETs under repetitive short-circuit (SC) stress. The experiment results show that the on-state resistance (<inline-formula> <tex-math notation="LaTeX">${R} _{\mathrm{ dson}}$ </tex-math></inline-formula>) and threshold voltage (<inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ th}}$ </tex-math></inline-formula>) increase significantly. Meanwhile, the drain-source current (<inline-formula> <tex-math notation="LaTeX">${I} _{\mathrm{ ds}}$ </tex-math></inline-formula>) decreases obviously with the increase of the SC cycles. Furthermore, the gate-source leakage current (<inline-formula> <tex-math notation="LaTeX">${I} _{\mathrm{ gss}}$ </tex-math></inline-formula>) of the SiC power MOSFETs increase greatly and the blocking characteristics deteriorated after 1000 SC cycles. The positive shift was observed on the gate-capacitance versus gate-voltage (<inline-formula> <tex-math notation="LaTeX">${C} _{\mathrm{ g}}$ </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ g}}$ </tex-math></inline-formula>) curve, which shows that the damage region could be in channel along the SiC/SiO<sub>2</sub> interface after repetitive SC stress. In order to obtain the trap information, trap characterization was performed by using LFN method, and the LFN results show that the trap density increases with the SC cycles. The physical mechanism could be attributed to electrically active traps generated at SiC/SiO<sub>2</sub> interface and oxide layer due to the peak ionization rate, the perpendicular electrical field and high temperature during SC stress. The study may be useful to provide reference for converters design and fault protection of SiC power MOSFETs.https://ieeexplore.ieee.org/document/8981958/Repetitive short-circuit (SC)low-frequency noise (LFN)trapssilicon carbide (SiC) power MOSFETs |
| spellingShingle | J. L. Wang Y. Q. Chen J. T. Feng X. B. Xu Y. F. En B. Hou R. Gao Y. Chen Y. Huang K. W. Geng Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress IEEE Journal of the Electron Devices Society Repetitive short-circuit (SC) low-frequency noise (LFN) traps silicon carbide (SiC) power MOSFETs |
| title | Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress |
| title_full | Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress |
| title_fullStr | Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress |
| title_full_unstemmed | Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress |
| title_short | Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress |
| title_sort | trap analysis based on low frequency noise for sic power mosfets under repetitive short circuit stress |
| topic | Repetitive short-circuit (SC) low-frequency noise (LFN) traps silicon carbide (SiC) power MOSFETs |
| url | https://ieeexplore.ieee.org/document/8981958/ |
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