Local detection of enhanced hot electron scattering in InSb/CdTe heterostructure interface
The InSb/CdTe heterojunction material, characterized by low effective mass and high electron mobility, exhibits interfacial energy band bending, leading to the Rashba spin–orbit coupling effect and nonreciprocal transport, which make it suitable for the fabrication of spintronic devices with broad a...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0271424 |
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| _version_ | 1849692949934243840 |
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| author | Xiaoxiao Ma Zhenghang Zhi Weijie Deng Tianxin Li Qianchun Weng Xufeng Kou Wei Lu |
| author_facet | Xiaoxiao Ma Zhenghang Zhi Weijie Deng Tianxin Li Qianchun Weng Xufeng Kou Wei Lu |
| author_sort | Xiaoxiao Ma |
| collection | DOAJ |
| description | The InSb/CdTe heterojunction material, characterized by low effective mass and high electron mobility, exhibits interfacial energy band bending, leading to the Rashba spin–orbit coupling effect and nonreciprocal transport, which make it suitable for the fabrication of spintronic devices with broad applications in logic and storage fields. However, the complex heterojunction interfaces of InSb/CdTe, composed of group III–V and group II–VI semiconductors, are prone to interdiffusion. Therefore, characterization and study of the interfacial properties of InSb/CdTe heterojunctions are crucial for the growth improvement of the InSb/CdTe material system as well as its application in the field of spintronics. In this study, a novel scanning probe , called a scanning noise microscope, is applied to visualize hot electron scattering in InSb/CdTe nano-devices. The results demonstrate that the near-field signal originates from the Coulomb scattering of charged ions on electrons at the interface of the embedded layer heterojunction. This real-space, nondestructive characterization of the heterojunction interface properties offers a new tool for enhancing the performance of heterojunctions. |
| format | Article |
| id | doaj-art-a9be1f85862248bd9a8d77334848bf5f |
| institution | DOAJ |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-a9be1f85862248bd9a8d77334848bf5f2025-08-20T03:20:34ZengAIP Publishing LLCAIP Advances2158-32262025-05-01155055113055113-410.1063/5.0271424Local detection of enhanced hot electron scattering in InSb/CdTe heterostructure interfaceXiaoxiao Ma0Zhenghang Zhi1Weijie Deng2Tianxin Li3Qianchun Weng4Xufeng Kou5Wei Lu6School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, ChinaShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, ChinaSchool of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, ChinaState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, ChinaSchool of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, ChinaThe InSb/CdTe heterojunction material, characterized by low effective mass and high electron mobility, exhibits interfacial energy band bending, leading to the Rashba spin–orbit coupling effect and nonreciprocal transport, which make it suitable for the fabrication of spintronic devices with broad applications in logic and storage fields. However, the complex heterojunction interfaces of InSb/CdTe, composed of group III–V and group II–VI semiconductors, are prone to interdiffusion. Therefore, characterization and study of the interfacial properties of InSb/CdTe heterojunctions are crucial for the growth improvement of the InSb/CdTe material system as well as its application in the field of spintronics. In this study, a novel scanning probe , called a scanning noise microscope, is applied to visualize hot electron scattering in InSb/CdTe nano-devices. The results demonstrate that the near-field signal originates from the Coulomb scattering of charged ions on electrons at the interface of the embedded layer heterojunction. This real-space, nondestructive characterization of the heterojunction interface properties offers a new tool for enhancing the performance of heterojunctions.http://dx.doi.org/10.1063/5.0271424 |
| spellingShingle | Xiaoxiao Ma Zhenghang Zhi Weijie Deng Tianxin Li Qianchun Weng Xufeng Kou Wei Lu Local detection of enhanced hot electron scattering in InSb/CdTe heterostructure interface AIP Advances |
| title | Local detection of enhanced hot electron scattering in InSb/CdTe heterostructure interface |
| title_full | Local detection of enhanced hot electron scattering in InSb/CdTe heterostructure interface |
| title_fullStr | Local detection of enhanced hot electron scattering in InSb/CdTe heterostructure interface |
| title_full_unstemmed | Local detection of enhanced hot electron scattering in InSb/CdTe heterostructure interface |
| title_short | Local detection of enhanced hot electron scattering in InSb/CdTe heterostructure interface |
| title_sort | local detection of enhanced hot electron scattering in insb cdte heterostructure interface |
| url | http://dx.doi.org/10.1063/5.0271424 |
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