Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing

Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing

Trench MOS Barrier Schottky (TMBS) rectifiers offer superior static and dynamic electrical characteristics when compared with planar Schottky rectifiers for a given active die size. The unique structure of TMBS devices allows for efficient manipulation of the electric field, enabling higher doping c...

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Bibliographic Details
Main Authors: Mohammed Tanvir Quddus, Alvaro D. Latorre-Rey, Zeinab Ramezani, Mihir Mudholkar
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Micromachines
Subjects:
charge sharing
trench MOS
Schottky diodes
analytical model
Online Access:https://www.mdpi.com/2072-666X/16/1/90
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