Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs Heterostructures
Photoreflectance (PR) and Raman are two very useful spectroscopy techniques that usually are used to know the surface electronic states in GaAs-based semiconductor devices. However, although they are exceptional tools there are few reports where both techniques were used in these kinds of devices. I...
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | Journal of Spectroscopy |
| Online Access: | http://dx.doi.org/10.1155/2016/4601249 |
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| author | Luis Zamora-Peredo Leandro García-González Julián Hernández-Torres Irving E. Cortes-Mestizo Víctor H. Méndez-García Máximo López-López |
| author_facet | Luis Zamora-Peredo Leandro García-González Julián Hernández-Torres Irving E. Cortes-Mestizo Víctor H. Méndez-García Máximo López-López |
| author_sort | Luis Zamora-Peredo |
| collection | DOAJ |
| description | Photoreflectance (PR) and Raman are two very useful spectroscopy techniques that usually are used to know the surface electronic states in GaAs-based semiconductor devices. However, although they are exceptional tools there are few reports where both techniques were used in these kinds of devices. In this work, the surface electronic states on AlGaAs/GaAs heterostructures were studied in order to identify the effect of factors like laser penetration depth, cap layer thickness, and surface passivation over PR and Raman spectra. PR measurements were performed alternately with two lasers (532 nm and 375 nm wavelength) as the modulation sources in order to identify internal and surface features. The surface electric field calculated by PR analysis decreased whereas the GaAs cap layer thickness increased, in good agreement with a similar behavior observed in Raman measurements (IL-/ILO ratio). When the heterostructures were treated by Si-flux, these techniques showed contrary behaviors. PR analysis revealed a diminution in the surface electric field due to a passivation process whereas the IL-/ILO ratio did not present the same behavior because it was dominated by the depletion layers width (cap layer thickness) and the laser penetration depth. |
| format | Article |
| id | doaj-art-a98cd3034b8c414faf99be39f96e68e6 |
| institution | OA Journals |
| issn | 2314-4920 2314-4939 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Spectroscopy |
| spelling | doaj-art-a98cd3034b8c414faf99be39f96e68e62025-08-20T02:23:06ZengWileyJournal of Spectroscopy2314-49202314-49392016-01-01201610.1155/2016/46012494601249Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs HeterostructuresLuis Zamora-Peredo0Leandro García-González1Julián Hernández-Torres2Irving E. Cortes-Mestizo3Víctor H. Méndez-García4Máximo López-López5Centro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, Calzada Adolfo Ruiz Cortines 455, Fracc. Costa Verde, 94292 Boca del Río, VER, MexicoCentro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, Calzada Adolfo Ruiz Cortines 455, Fracc. Costa Verde, 94292 Boca del Río, VER, MexicoCentro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, Calzada Adolfo Ruiz Cortines 455, Fracc. Costa Verde, 94292 Boca del Río, VER, MexicoUniversidad Autónoma de San Luis Potosí, Center for the Innovation and Application of Science and Technology, Sierra Leona 550, Lomas 4a Secc., 78210 San Luis Potosí, SLP, MexicoUniversidad Autónoma de San Luis Potosí, Center for the Innovation and Application of Science and Technology, Sierra Leona 550, Lomas 4a Secc., 78210 San Luis Potosí, SLP, MexicoCentro de Investigación y Estudios Avanzados del IPN, Apartado Postal 14-740, 07360 Ciudad de México, MexicoPhotoreflectance (PR) and Raman are two very useful spectroscopy techniques that usually are used to know the surface electronic states in GaAs-based semiconductor devices. However, although they are exceptional tools there are few reports where both techniques were used in these kinds of devices. In this work, the surface electronic states on AlGaAs/GaAs heterostructures were studied in order to identify the effect of factors like laser penetration depth, cap layer thickness, and surface passivation over PR and Raman spectra. PR measurements were performed alternately with two lasers (532 nm and 375 nm wavelength) as the modulation sources in order to identify internal and surface features. The surface electric field calculated by PR analysis decreased whereas the GaAs cap layer thickness increased, in good agreement with a similar behavior observed in Raman measurements (IL-/ILO ratio). When the heterostructures were treated by Si-flux, these techniques showed contrary behaviors. PR analysis revealed a diminution in the surface electric field due to a passivation process whereas the IL-/ILO ratio did not present the same behavior because it was dominated by the depletion layers width (cap layer thickness) and the laser penetration depth.http://dx.doi.org/10.1155/2016/4601249 |
| spellingShingle | Luis Zamora-Peredo Leandro García-González Julián Hernández-Torres Irving E. Cortes-Mestizo Víctor H. Méndez-García Máximo López-López Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs Heterostructures Journal of Spectroscopy |
| title | Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs Heterostructures |
| title_full | Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs Heterostructures |
| title_fullStr | Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs Heterostructures |
| title_full_unstemmed | Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs Heterostructures |
| title_short | Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs Heterostructures |
| title_sort | photoreflectance and raman study of surface electric states on algaas gaas heterostructures |
| url | http://dx.doi.org/10.1155/2016/4601249 |
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