Low Temperature Conductivity in n-Type Noncompensated Silicon below Insulator-Metal Transition

Low Temperature Conductivity in n-Type Noncompensated Silicon below Insulator-Metal Transition

We investigate the transport properties of n-type noncompensated silicon below the insulator-metal transition by measuring the electrical and magnetoresistances as a function of temperature T for the interval 2–300 K. Experimental data are analyzed taking into account possible simple activation and...

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Bibliographic Details
Main Authors: A. L. Danilyuk, A. G. Trafimenko, A. K. Fedotov, I. A. Svito, S. L. Prischepa
Format: Article
Language:English
Published: Wiley 2017-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2017/5038462
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