Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact
Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO...
Saved in:
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-12-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/12/1499 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850035573461352448 |
|---|---|
| author | Hongxuan Guo Jiahao Yao Siyuan Chen Chong Qian Xiangyu Pan Kuibo Yin Hao Zhu Xu Gao Suidong Wang Litao Sun |
| author_facet | Hongxuan Guo Jiahao Yao Siyuan Chen Chong Qian Xiangyu Pan Kuibo Yin Hao Zhu Xu Gao Suidong Wang Litao Sun |
| author_sort | Hongxuan Guo |
| collection | DOAJ |
| description | Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO substrate using the radio-frequency magnetron sputtering technique. Al’s and Au’s top electrodes were deposited on AlN thin films to make a Au/Al/AlN/ITO sandwich structure memristor. The effects of the Al<sub>2</sub>O<sub>3</sub> film on the on/off window and voltage characteristics of the device were investigated. The deposition time and nitrogen content in the sputtering atmosphere were changed to adjust the thickness and composition of AlN films, respectively. The possible mechanism of resistive switching was examined via analyses of the electrical resistive switching characteristics, forming voltage, and switching ratio. |
| format | Article |
| id | doaj-art-a905e3eceefd4fe8a94a65e3209ca272 |
| institution | DOAJ |
| issn | 2072-666X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-a905e3eceefd4fe8a94a65e3209ca2722025-08-20T02:57:27ZengMDPI AGMicromachines2072-666X2024-12-011512149910.3390/mi15121499Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance ImpactHongxuan Guo0Jiahao Yao1Siyuan Chen2Chong Qian3Xiangyu Pan4Kuibo Yin5Hao Zhu6Xu Gao7Suidong Wang8Litao Sun9School of Integrated Circuit, Southeast University, Nanjing 210096, ChinaSchool of Integrated Circuit, Southeast University, Nanjing 210096, ChinaSchool of Integrated Circuit, Southeast University, Nanjing 210096, ChinaInstitute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, ChinaInstitute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, ChinaSchool of Integrated Circuit, Southeast University, Nanjing 210096, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaInstitute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, ChinaInstitute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, ChinaSchool of Integrated Circuit, Southeast University, Nanjing 210096, ChinaAluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO substrate using the radio-frequency magnetron sputtering technique. Al’s and Au’s top electrodes were deposited on AlN thin films to make a Au/Al/AlN/ITO sandwich structure memristor. The effects of the Al<sub>2</sub>O<sub>3</sub> film on the on/off window and voltage characteristics of the device were investigated. The deposition time and nitrogen content in the sputtering atmosphere were changed to adjust the thickness and composition of AlN films, respectively. The possible mechanism of resistive switching was examined via analyses of the electrical resistive switching characteristics, forming voltage, and switching ratio.https://www.mdpi.com/2072-666X/15/12/1499aluminum nitride (AlN)sputteringaluminum oxide (Al<sub>2</sub>O<sub>3</sub>)memristorresistive random access memory (RRAM)conductive filaments (CFs) |
| spellingShingle | Hongxuan Guo Jiahao Yao Siyuan Chen Chong Qian Xiangyu Pan Kuibo Yin Hao Zhu Xu Gao Suidong Wang Litao Sun Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact Micromachines aluminum nitride (AlN) sputtering aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) memristor resistive random access memory (RRAM) conductive filaments (CFs) |
| title | Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact |
| title_full | Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact |
| title_fullStr | Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact |
| title_full_unstemmed | Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact |
| title_short | Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact |
| title_sort | enhancing resistive switching in aln based memristors through oxidative al sub 2 sub o sub 3 sub layer formation a study on preparation techniques and performance impact |
| topic | aluminum nitride (AlN) sputtering aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) memristor resistive random access memory (RRAM) conductive filaments (CFs) |
| url | https://www.mdpi.com/2072-666X/15/12/1499 |
| work_keys_str_mv | AT hongxuanguo enhancingresistiveswitchinginalnbasedmemristorsthroughoxidativealsub2subosub3sublayerformationastudyonpreparationtechniquesandperformanceimpact AT jiahaoyao enhancingresistiveswitchinginalnbasedmemristorsthroughoxidativealsub2subosub3sublayerformationastudyonpreparationtechniquesandperformanceimpact AT siyuanchen enhancingresistiveswitchinginalnbasedmemristorsthroughoxidativealsub2subosub3sublayerformationastudyonpreparationtechniquesandperformanceimpact AT chongqian enhancingresistiveswitchinginalnbasedmemristorsthroughoxidativealsub2subosub3sublayerformationastudyonpreparationtechniquesandperformanceimpact AT xiangyupan enhancingresistiveswitchinginalnbasedmemristorsthroughoxidativealsub2subosub3sublayerformationastudyonpreparationtechniquesandperformanceimpact AT kuiboyin enhancingresistiveswitchinginalnbasedmemristorsthroughoxidativealsub2subosub3sublayerformationastudyonpreparationtechniquesandperformanceimpact AT haozhu enhancingresistiveswitchinginalnbasedmemristorsthroughoxidativealsub2subosub3sublayerformationastudyonpreparationtechniquesandperformanceimpact AT xugao enhancingresistiveswitchinginalnbasedmemristorsthroughoxidativealsub2subosub3sublayerformationastudyonpreparationtechniquesandperformanceimpact AT suidongwang enhancingresistiveswitchinginalnbasedmemristorsthroughoxidativealsub2subosub3sublayerformationastudyonpreparationtechniquesandperformanceimpact AT litaosun enhancingresistiveswitchinginalnbasedmemristorsthroughoxidativealsub2subosub3sublayerformationastudyonpreparationtechniquesandperformanceimpact |