Highly sensitive multicolor uncooled photoresponse and imaging based on symmetry breaking heterojunction
Abstract Multicolor photodetection, essential for applications in infrared imaging, environmental monitoring, and spectral analysis, is often limited by the narrow bandgaps of conventional materials, which struggle with speed, sensitivity, and room‐temperature operation. We address these issues with...
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| Format: | Article |
| Language: | English |
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Wiley
2025-03-01
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| Series: | InfoMat |
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| Online Access: | https://doi.org/10.1002/inf2.12641 |
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| author | Liuping Liu Sheng Ni Fengyi Zhu Yuling Zhu Changlong Liu Xutao Zhang He Zhu Jiazhen Zhang Donghai Zhang Changyi Pan Li Han Weiwei Tang Guanhai Li Haibo Shu Xiaoshuang Chen |
| author_facet | Liuping Liu Sheng Ni Fengyi Zhu Yuling Zhu Changlong Liu Xutao Zhang He Zhu Jiazhen Zhang Donghai Zhang Changyi Pan Li Han Weiwei Tang Guanhai Li Haibo Shu Xiaoshuang Chen |
| author_sort | Liuping Liu |
| collection | DOAJ |
| description | Abstract Multicolor photodetection, essential for applications in infrared imaging, environmental monitoring, and spectral analysis, is often limited by the narrow bandgaps of conventional materials, which struggle with speed, sensitivity, and room‐temperature operation. We address these issues with a multicolor uncooled photodetector based on an asymmetric Au/SnS/Gr vertical heterojunction with inversion‐symmetry breaking. This design utilizes the complementary bandgaps of SnS and graphene to enhance the efficiency of carriers' transport through consistently oriented built‐in electric fields, achieving significant advancements in directional photoresponse. The device demonstrates highly sensitive photoelectric detection performance, such as a responsivity (R) of 55.4–89.7 A W–1 with rapid response times of approximately 104 μs, and exceptional detectivity (D*) of 2.38 × 1010 Jones ~8.19 × 1013 Jones from visible (520 nm) to infrared (2000 nm) light, making it suitable for applications demanding an imaging resolution of ~0.5 mm. Additionally, the comparative analysis reveals that the asymmetric vertical heterojunction outperforms its counterparts, exhibiting approximately 9‐fold the photoresponse of symmetric vertical heterojunction and almost 100‐fold that of symmetric horizontal heterojunction. This highly sensitive multicolor detector holds significant promise for applications in advanced versatile object detection and imaging recognition systems. |
| format | Article |
| id | doaj-art-a8d446761eef4bcab21afc8bb8f62810 |
| institution | Kabale University |
| issn | 2567-3165 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Wiley |
| record_format | Article |
| series | InfoMat |
| spelling | doaj-art-a8d446761eef4bcab21afc8bb8f628102025-08-20T03:39:56ZengWileyInfoMat2567-31652025-03-0173n/an/a10.1002/inf2.12641Highly sensitive multicolor uncooled photoresponse and imaging based on symmetry breaking heterojunctionLiuping Liu0Sheng Ni1Fengyi Zhu2Yuling Zhu3Changlong Liu4Xutao Zhang5He Zhu6Jiazhen Zhang7Donghai Zhang8Changyi Pan9Li Han10Weiwei Tang11Guanhai Li12Haibo Shu13Xiaoshuang Chen14College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou the People's Republic of ChinaCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou the People's Republic of ChinaCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou the People's Republic of ChinaCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou the People's Republic of ChinaCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou the People's Republic of ChinaFrontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering Northwestern Polytechnical University Xi'an the People's Republic of ChinaCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou the People's Republic of ChinaYangtze Delta Region Institute (Huzhou) University of Electronic Science and Technology of China Huzhou the People's Republic of ChinaDepartment of Electrical Engineering City University of Hong Kong Kowloon Hong Kong the People's Republic of ChinaCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou the People's Republic of ChinaCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou the People's Republic of ChinaCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou the People's Republic of ChinaCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou the People's Republic of ChinaCollege of Optical and Electronic Technology China Jiliang University Hangzhou the People's Republic of ChinaCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou the People's Republic of ChinaAbstract Multicolor photodetection, essential for applications in infrared imaging, environmental monitoring, and spectral analysis, is often limited by the narrow bandgaps of conventional materials, which struggle with speed, sensitivity, and room‐temperature operation. We address these issues with a multicolor uncooled photodetector based on an asymmetric Au/SnS/Gr vertical heterojunction with inversion‐symmetry breaking. This design utilizes the complementary bandgaps of SnS and graphene to enhance the efficiency of carriers' transport through consistently oriented built‐in electric fields, achieving significant advancements in directional photoresponse. The device demonstrates highly sensitive photoelectric detection performance, such as a responsivity (R) of 55.4–89.7 A W–1 with rapid response times of approximately 104 μs, and exceptional detectivity (D*) of 2.38 × 1010 Jones ~8.19 × 1013 Jones from visible (520 nm) to infrared (2000 nm) light, making it suitable for applications demanding an imaging resolution of ~0.5 mm. Additionally, the comparative analysis reveals that the asymmetric vertical heterojunction outperforms its counterparts, exhibiting approximately 9‐fold the photoresponse of symmetric vertical heterojunction and almost 100‐fold that of symmetric horizontal heterojunction. This highly sensitive multicolor detector holds significant promise for applications in advanced versatile object detection and imaging recognition systems.https://doi.org/10.1002/inf2.12641heterojunctionhighly sensitive photoresponseimaginginversion‐symmetry breakingmulticolor uncooled detector |
| spellingShingle | Liuping Liu Sheng Ni Fengyi Zhu Yuling Zhu Changlong Liu Xutao Zhang He Zhu Jiazhen Zhang Donghai Zhang Changyi Pan Li Han Weiwei Tang Guanhai Li Haibo Shu Xiaoshuang Chen Highly sensitive multicolor uncooled photoresponse and imaging based on symmetry breaking heterojunction InfoMat heterojunction highly sensitive photoresponse imaging inversion‐symmetry breaking multicolor uncooled detector |
| title | Highly sensitive multicolor uncooled photoresponse and imaging based on symmetry breaking heterojunction |
| title_full | Highly sensitive multicolor uncooled photoresponse and imaging based on symmetry breaking heterojunction |
| title_fullStr | Highly sensitive multicolor uncooled photoresponse and imaging based on symmetry breaking heterojunction |
| title_full_unstemmed | Highly sensitive multicolor uncooled photoresponse and imaging based on symmetry breaking heterojunction |
| title_short | Highly sensitive multicolor uncooled photoresponse and imaging based on symmetry breaking heterojunction |
| title_sort | highly sensitive multicolor uncooled photoresponse and imaging based on symmetry breaking heterojunction |
| topic | heterojunction highly sensitive photoresponse imaging inversion‐symmetry breaking multicolor uncooled detector |
| url | https://doi.org/10.1002/inf2.12641 |
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