Enhancing Silicon Compound Heterojunction Solar Cells with Vanadium‐Doped MoOX as Hole Transport Layers
Abstract Crystalline silicon (c‐Si) solar cells dominate the global market, and the development of eco‐friendly and cost‐effective c‐Si compound solar cells with carrier‐selective passivated contacts has attracted increasing attention. This work investigated the impact of oxygen vacancies (VO) and v...
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| Format: | Article |
| Language: | English |
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Wiley
2025-07-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202505929 |
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| author | Hongbo Cai Xiqi Yang Xiaofei Xu Qinghua Zeng Shenghou Zhou Zilong Zheng Dongdong Li Yongzhe Zhang Hui Yan |
| author_facet | Hongbo Cai Xiqi Yang Xiaofei Xu Qinghua Zeng Shenghou Zhou Zilong Zheng Dongdong Li Yongzhe Zhang Hui Yan |
| author_sort | Hongbo Cai |
| collection | DOAJ |
| description | Abstract Crystalline silicon (c‐Si) solar cells dominate the global market, and the development of eco‐friendly and cost‐effective c‐Si compound solar cells with carrier‐selective passivated contacts has attracted increasing attention. This work investigated the impact of oxygen vacancies (VO) and vanadium (V) doping on molybdenum trioxide (MoOX), using a combination of first‐principles calculations and device simulations. These VO defects accumulated from bulk to surface with lower energy barrier of 1.7 eV, compared to 3.4 eV on surface and 3.8 eV from surface to bulk. The surface VO significantly decreased MoOX work function from 6.1 eV to 4.8 eV，considering alteration in surface charges from +4 µC cm−2 to ‐8 µC cm−2. Vanadium doping increased VO transport barrier by 0.1 eV, suppressing defect migration. Meanwhile, it raised work function by 0.26 eV and widened the bandgap by 0.6 eV. As hole transport layer, V‐doped MoOX on illuminated side of c‐Si solar cells boosted absolute efficiency by 1.0%, compared to MoOX on rear side; of this increase, 0.2% was attributed to higher work function and 0.8% was due to reduced optical losses. These findings emphasize V‐doped MoOX in enhancing c‐Si compound solar cell performance and in promoting the development of efficient photovoltaic technologies. |
| format | Article |
| id | doaj-art-a8c02b8a6c2c46d889294142eb657039 |
| institution | Kabale University |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-a8c02b8a6c2c46d889294142eb6570392025-08-20T03:32:37ZengWileyAdvanced Science2198-38442025-07-011228n/an/a10.1002/advs.202505929Enhancing Silicon Compound Heterojunction Solar Cells with Vanadium‐Doped MoOX as Hole Transport LayersHongbo Cai0Xiqi Yang1Xiaofei Xu2Qinghua Zeng3Shenghou Zhou4Zilong Zheng5Dongdong Li6Yongzhe Zhang7Hui Yan8College of Materials Science and EngineeringBeijing Key Lab of Microstructure and Properties of Advanced MaterialsBeijing University of TechnologyBeijing 100124 P. R. ChinaCollege of Materials Science and EngineeringBeijing Key Lab of Microstructure and Properties of Advanced MaterialsBeijing University of TechnologyBeijing 100124 P. R. ChinaCollege of Materials Science and EngineeringBeijing Key Lab of Microstructure and Properties of Advanced MaterialsBeijing University of TechnologyBeijing 100124 P. R. ChinaCollege of Materials Science and EngineeringBeijing Key Lab of Microstructure and Properties of Advanced MaterialsBeijing University of TechnologyBeijing 100124 P. R. ChinaCollege of Materials Science and EngineeringBeijing Key Lab of Microstructure and Properties of Advanced MaterialsBeijing University of TechnologyBeijing 100124 P. R. ChinaCollege of Materials Science and EngineeringBeijing Key Lab of Microstructure and Properties of Advanced MaterialsBeijing University of TechnologyBeijing 100124 P. R. ChinaZhangjiang Laboratory100 Haike Road, Zhangjiang Hi‐Tech ParkShanghai201210P. R. ChinaCollege of Materials Science and EngineeringBeijing Key Lab of Microstructure and Properties of Advanced MaterialsBeijing University of TechnologyBeijing 100124 P. R. ChinaCollege of Materials Science and EngineeringBeijing Key Lab of Microstructure and Properties of Advanced MaterialsBeijing University of TechnologyBeijing 100124 P. R. ChinaAbstract Crystalline silicon (c‐Si) solar cells dominate the global market, and the development of eco‐friendly and cost‐effective c‐Si compound solar cells with carrier‐selective passivated contacts has attracted increasing attention. This work investigated the impact of oxygen vacancies (VO) and vanadium (V) doping on molybdenum trioxide (MoOX), using a combination of first‐principles calculations and device simulations. These VO defects accumulated from bulk to surface with lower energy barrier of 1.7 eV, compared to 3.4 eV on surface and 3.8 eV from surface to bulk. The surface VO significantly decreased MoOX work function from 6.1 eV to 4.8 eV，considering alteration in surface charges from +4 µC cm−2 to ‐8 µC cm−2. Vanadium doping increased VO transport barrier by 0.1 eV, suppressing defect migration. Meanwhile, it raised work function by 0.26 eV and widened the bandgap by 0.6 eV. As hole transport layer, V‐doped MoOX on illuminated side of c‐Si solar cells boosted absolute efficiency by 1.0%, compared to MoOX on rear side; of this increase, 0.2% was attributed to higher work function and 0.8% was due to reduced optical losses. These findings emphasize V‐doped MoOX in enhancing c‐Si compound solar cell performance and in promoting the development of efficient photovoltaic technologies.https://doi.org/10.1002/advs.202505929DFT calculationsfinite element simulationsilicon solar cellstransition metal oxides |
| spellingShingle | Hongbo Cai Xiqi Yang Xiaofei Xu Qinghua Zeng Shenghou Zhou Zilong Zheng Dongdong Li Yongzhe Zhang Hui Yan Enhancing Silicon Compound Heterojunction Solar Cells with Vanadium‐Doped MoOX as Hole Transport Layers Advanced Science DFT calculations finite element simulation silicon solar cells transition metal oxides |
| title | Enhancing Silicon Compound Heterojunction Solar Cells with Vanadium‐Doped MoOX as Hole Transport Layers |
| title_full | Enhancing Silicon Compound Heterojunction Solar Cells with Vanadium‐Doped MoOX as Hole Transport Layers |
| title_fullStr | Enhancing Silicon Compound Heterojunction Solar Cells with Vanadium‐Doped MoOX as Hole Transport Layers |
| title_full_unstemmed | Enhancing Silicon Compound Heterojunction Solar Cells with Vanadium‐Doped MoOX as Hole Transport Layers |
| title_short | Enhancing Silicon Compound Heterojunction Solar Cells with Vanadium‐Doped MoOX as Hole Transport Layers |
| title_sort | enhancing silicon compound heterojunction solar cells with vanadium doped moox as hole transport layers |
| topic | DFT calculations finite element simulation silicon solar cells transition metal oxides |
| url | https://doi.org/10.1002/advs.202505929 |
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