Enhancing Silicon Compound Heterojunction Solar Cells with Vanadium‐Doped MoOX as Hole Transport Layers

Enhancing Silicon Compound Heterojunction Solar Cells with Vanadium‐Doped MoOX as Hole Transport Layers

Abstract Crystalline silicon (c‐Si) solar cells dominate the global market, and the development of eco‐friendly and cost‐effective c‐Si compound solar cells with carrier‐selective passivated contacts has attracted increasing attention. This work investigated the impact of oxygen vacancies (VO) and v...

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Bibliographic Details
Main Authors: Hongbo Cai, Xiqi Yang, Xiaofei Xu, Qinghua Zeng, Shenghou Zhou, Zilong Zheng, Dongdong Li, Yongzhe Zhang, Hui Yan
Format: Article
Language:English
Published: Wiley 2025-07-01
Series:Advanced Science
Subjects:
DFT calculations
finite element simulation
silicon solar cells
transition metal oxides
Online Access:https://doi.org/10.1002/advs.202505929
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Summary:Abstract Crystalline silicon (c‐Si) solar cells dominate the global market, and the development of eco‐friendly and cost‐effective c‐Si compound solar cells with carrier‐selective passivated contacts has attracted increasing attention. This work investigated the impact of oxygen vacancies (VO) and vanadium (V) doping on molybdenum trioxide (MoOX), using a combination of first‐principles calculations and device simulations. These VO defects accumulated from bulk to surface with lower energy barrier of 1.7 eV, compared to 3.4 eV on surface and 3.8 eV from surface to bulk. The surface VO significantly decreased MoOX work function from 6.1 eV to 4.8 eV，considering alteration in surface charges from +4 µC cm−2 to ‐8 µC cm−2. Vanadium doping increased VO transport barrier by 0.1 eV, suppressing defect migration. Meanwhile, it raised work function by 0.26 eV and widened the bandgap by 0.6 eV. As hole transport layer, V‐doped MoOX on illuminated side of c‐Si solar cells boosted absolute efficiency by 1.0%, compared to MoOX on rear side; of this increase, 0.2% was attributed to higher work function and 0.8% was due to reduced optical losses. These findings emphasize V‐doped MoOX in enhancing c‐Si compound solar cell performance and in promoting the development of efficient photovoltaic technologies.
ISSN:2198-3844

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