Resistive Switching Properties of Highly Transparent SnO2:Fe
Fe doped SnO2 transparent thin film nanostructures were grown by chemical solution deposition and its electric field induced resistive switching properties were investigated for non-volatile resistive random access memory (RRAM) applications. Simple, low temperature solution process growth of SnO2:F...
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Sumy State University
2017-02-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01025.pdf |
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| author | S.J. Trivedi U.S. Joshi |
| author_facet | S.J. Trivedi U.S. Joshi |
| author_sort | S.J. Trivedi |
| collection | DOAJ |
| description | Fe doped SnO2 transparent thin film nanostructures were grown by chemical solution deposition and its electric field induced resistive switching properties were investigated for non-volatile resistive random access memory (RRAM) applications. Simple, low temperature solution process growth of SnO2:Fe thin film nanostructures was employed. Grazing incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM), respectively, confirmed a phase pure cubic growth with mono-disperse nanocrystallites of ~ 20 nm. Sharp interface with substrate and top metal electrodes were achieved. Reproducible hysteresis in the I-V curves with symmetrical resistance switching ratio of more than 4 103 at a low operating voltage of ± 1.1 V has been demonstrated. Large values of memory retention of about 5 moths; confirmed the non-volatile behaviour of the device cell consisting of Ag/SnO2:Fe/Ag planar structure. A mechanism involving the space charge limited current combined with Schottky conduction at the metal/oxide interface is proposed. A possible mechanism of the formation and rupture of conducting filament is proposed based on the Joule heating effect with external electron injection at the Ag/SnO2 interface. |
| format | Article |
| id | doaj-art-a8b79e71232f4787baf49f717217f35a |
| institution | Kabale University |
| issn | 2077-6772 |
| language | English |
| publishDate | 2017-02-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-a8b79e71232f4787baf49f717217f35a2025-08-20T03:39:09ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722017-02-019101025-101025-510.21272/jnep.9(1).01025Resistive Switching Properties of Highly Transparent SnO2:FeS.J. Trivedi0U.S. Joshi1Department of Physics, School of Sciences, Gujarat University, Ahmedabad-380 009, IndiaDepartment of Physics, School of Sciences, Gujarat University, Ahmedabad-380 009, IndiaFe doped SnO2 transparent thin film nanostructures were grown by chemical solution deposition and its electric field induced resistive switching properties were investigated for non-volatile resistive random access memory (RRAM) applications. Simple, low temperature solution process growth of SnO2:Fe thin film nanostructures was employed. Grazing incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM), respectively, confirmed a phase pure cubic growth with mono-disperse nanocrystallites of ~ 20 nm. Sharp interface with substrate and top metal electrodes were achieved. Reproducible hysteresis in the I-V curves with symmetrical resistance switching ratio of more than 4 103 at a low operating voltage of ± 1.1 V has been demonstrated. Large values of memory retention of about 5 moths; confirmed the non-volatile behaviour of the device cell consisting of Ag/SnO2:Fe/Ag planar structure. A mechanism involving the space charge limited current combined with Schottky conduction at the metal/oxide interface is proposed. A possible mechanism of the formation and rupture of conducting filament is proposed based on the Joule heating effect with external electron injection at the Ag/SnO2 interface.http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01025.pdfResistance switchingTin oxideUVVis spectroscopyRRA |
| spellingShingle | S.J. Trivedi U.S. Joshi Resistive Switching Properties of Highly Transparent SnO2:Fe Журнал нано- та електронної фізики Resistance switching Tin oxide UV Vis spectroscopy RRA |
| title | Resistive Switching Properties of Highly Transparent SnO2:Fe |
| title_full | Resistive Switching Properties of Highly Transparent SnO2:Fe |
| title_fullStr | Resistive Switching Properties of Highly Transparent SnO2:Fe |
| title_full_unstemmed | Resistive Switching Properties of Highly Transparent SnO2:Fe |
| title_short | Resistive Switching Properties of Highly Transparent SnO2:Fe |
| title_sort | resistive switching properties of highly transparent sno2 fe |
| topic | Resistance switching Tin oxide UV Vis spectroscopy RRA |
| url | http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01025.pdf |
| work_keys_str_mv | AT sjtrivedi resistiveswitchingpropertiesofhighlytransparentsno2fe AT usjoshi resistiveswitchingpropertiesofhighlytransparentsno2fe |