Studying the Attribution of LiF in OLED by the 𝐶-𝑉 Characteristics
The organic light-emitting device (OLED) with simple structures of indium tin oxide (ITO)/tris(8-quinolinolato) aluminum (Alq3)/LiF/Al and ITO/Alq3/Al was fabricated to analyze the contribution of LiF in OLED. We used the 𝐶-𝑉 characteristics to investigate the contribution of LiF in OLED and found t...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2010-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2010/291931 |
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| _version_ | 1832556351432163328 |
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| author | Chun-lin Zhang Fang-cong Wang Yong Zhang Hai-xia Li Su Liu |
| author_facet | Chun-lin Zhang Fang-cong Wang Yong Zhang Hai-xia Li Su Liu |
| author_sort | Chun-lin Zhang |
| collection | DOAJ |
| description | The organic light-emitting device (OLED) with simple structures of indium tin oxide (ITO)/tris(8-quinolinolato) aluminum (Alq3)/LiF/Al and ITO/Alq3/Al was fabricated to analyze the contribution of LiF in OLED. We used the 𝐶-𝑉 characteristics to investigate the contribution of LiF in OLED and found that the capacitance of the above-mentioned structures was 12.5 nF and 77.5 nF, respectively. It is shown that the LiF layer affects the property of OLED resulting in the change of the capacitance of the device. |
| format | Article |
| id | doaj-art-a82bfe703c644d5ea47ab868319108bd |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2010-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-a82bfe703c644d5ea47ab868319108bd2025-02-03T05:45:40ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2010-01-01201010.1155/2010/291931291931Studying the Attribution of LiF in OLED by the 𝐶-𝑉 CharacteristicsChun-lin Zhang0Fang-cong Wang1Yong Zhang2Hai-xia Li3Su Liu4Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou City 730000, ChinaInstitute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou City 730000, ChinaEditorial Board of Journal of Lanzhou University, Lanzhou 730000, ChinaInstitute of Modern Physics, Chinese Academy of Sciences, Lanzhou 73000, ChinaInstitute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou City 730000, ChinaThe organic light-emitting device (OLED) with simple structures of indium tin oxide (ITO)/tris(8-quinolinolato) aluminum (Alq3)/LiF/Al and ITO/Alq3/Al was fabricated to analyze the contribution of LiF in OLED. We used the 𝐶-𝑉 characteristics to investigate the contribution of LiF in OLED and found that the capacitance of the above-mentioned structures was 12.5 nF and 77.5 nF, respectively. It is shown that the LiF layer affects the property of OLED resulting in the change of the capacitance of the device.http://dx.doi.org/10.1155/2010/291931 |
| spellingShingle | Chun-lin Zhang Fang-cong Wang Yong Zhang Hai-xia Li Su Liu Studying the Attribution of LiF in OLED by the 𝐶-𝑉 Characteristics International Journal of Photoenergy |
| title | Studying the Attribution of LiF in OLED by the 𝐶-𝑉 Characteristics |
| title_full | Studying the Attribution of LiF in OLED by the 𝐶-𝑉 Characteristics |
| title_fullStr | Studying the Attribution of LiF in OLED by the 𝐶-𝑉 Characteristics |
| title_full_unstemmed | Studying the Attribution of LiF in OLED by the 𝐶-𝑉 Characteristics |
| title_short | Studying the Attribution of LiF in OLED by the 𝐶-𝑉 Characteristics |
| title_sort | studying the attribution of lif in oled by the 𝐶 𝑉 characteristics |
| url | http://dx.doi.org/10.1155/2010/291931 |
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