Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate
Abstract Although GaN has successfully epitaxy growth on 4H‐SiC substrate, its kinetics mechanism, and how to control the morphology and polarity of epitaxial GaN have not been revealed yet. Herein, by investigating the epitaxial process of GaN growth on 4H‐SiC substrate, we found that the Si‐TH and...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202400978 |
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