APA (7th ed.) Citation

Yuan, H., Wang, L., Guo, J., Yuan, R., Lin, Z., Zhang, J., . . . Chang, J. Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate. Wiley-VCH.

Chicago Style (17th ed.) Citation

Yuan, Haidong, Liwei Wang, Jiangming Guo, Ruimei Yuan, Zhenhua Lin, Jincheng Zhang, Lixin Guo, Yue Hao, and Jingjing Chang. Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate. Wiley-VCH.

MLA (9th ed.) Citation

Yuan, Haidong, et al. Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate. Wiley-VCH.