Lattice defect engineering advances n-type PbSe thermoelectrics
Abstract Te-free thermoelectrics have garnered significant interest due to their immense thermoelectric potential and low cost. However, most Te-free thermoelectrics have relatively low performance because of the strong electrical and thermal transport conflicts and unsatisfactory compatibility of i...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-56003-9 |
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| author | Qian Deng Xiao-Lei Shi Meng Li Xiaobo Tan Ruiheng Li Chen Wang Yue Chen Hongliang Dong Ran Ang Zhi-Gang Chen |
| author_facet | Qian Deng Xiao-Lei Shi Meng Li Xiaobo Tan Ruiheng Li Chen Wang Yue Chen Hongliang Dong Ran Ang Zhi-Gang Chen |
| author_sort | Qian Deng |
| collection | DOAJ |
| description | Abstract Te-free thermoelectrics have garnered significant interest due to their immense thermoelectric potential and low cost. However, most Te-free thermoelectrics have relatively low performance because of the strong electrical and thermal transport conflicts and unsatisfactory compatibility of interfaces between device materials. Here, we develop lattice defect engineering through Cu doping to realize a record-high figure of merit of ~1.9 in n-type polycrystalline PbSe. Detailed micro/nanostructural characterizations and first-principles calculations demonstrate that Cu-induced interstitial defects and nanoprecipitates simultaneously optimize electron and phonon transport properties. Moreover, a robust Co/PbSe interface is designed to effectively prevent chemical reactions/diffusion; this interface exhibited a low electrical contact resistivity of ~10.9 μΩ cm2, excellent durability, and good stability in the thermoelectric module, which achieves a record-high conversion efficiency of 13.1% at a temperature difference of 460 K in segmented thermoelectric modules. This study lays the groundwork for advancing the development of Te-free selenide-based thermoelectric materials. |
| format | Article |
| id | doaj-art-a7c6b337dacc463da93f909f4af5605a |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-a7c6b337dacc463da93f909f4af5605a2025-01-19T12:31:02ZengNature PortfolioNature Communications2041-17232025-01-0116111110.1038/s41467-025-56003-9Lattice defect engineering advances n-type PbSe thermoelectricsQian Deng0Xiao-Lei Shi1Meng Li2Xiaobo Tan3Ruiheng Li4Chen Wang5Yue Chen6Hongliang Dong7Ran Ang8Zhi-Gang Chen9Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan UniversitySchool of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of TechnologySchool of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of TechnologyKey Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan UniversityKey Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan UniversityDepartment of Mechanical Engineering, The University of Hong KongDepartment of Mechanical Engineering, The University of Hong KongCenter for High Pressure Science and Technology Advanced ResearchKey Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan UniversitySchool of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of TechnologyAbstract Te-free thermoelectrics have garnered significant interest due to their immense thermoelectric potential and low cost. However, most Te-free thermoelectrics have relatively low performance because of the strong electrical and thermal transport conflicts and unsatisfactory compatibility of interfaces between device materials. Here, we develop lattice defect engineering through Cu doping to realize a record-high figure of merit of ~1.9 in n-type polycrystalline PbSe. Detailed micro/nanostructural characterizations and first-principles calculations demonstrate that Cu-induced interstitial defects and nanoprecipitates simultaneously optimize electron and phonon transport properties. Moreover, a robust Co/PbSe interface is designed to effectively prevent chemical reactions/diffusion; this interface exhibited a low electrical contact resistivity of ~10.9 μΩ cm2, excellent durability, and good stability in the thermoelectric module, which achieves a record-high conversion efficiency of 13.1% at a temperature difference of 460 K in segmented thermoelectric modules. This study lays the groundwork for advancing the development of Te-free selenide-based thermoelectric materials.https://doi.org/10.1038/s41467-025-56003-9 |
| spellingShingle | Qian Deng Xiao-Lei Shi Meng Li Xiaobo Tan Ruiheng Li Chen Wang Yue Chen Hongliang Dong Ran Ang Zhi-Gang Chen Lattice defect engineering advances n-type PbSe thermoelectrics Nature Communications |
| title | Lattice defect engineering advances n-type PbSe thermoelectrics |
| title_full | Lattice defect engineering advances n-type PbSe thermoelectrics |
| title_fullStr | Lattice defect engineering advances n-type PbSe thermoelectrics |
| title_full_unstemmed | Lattice defect engineering advances n-type PbSe thermoelectrics |
| title_short | Lattice defect engineering advances n-type PbSe thermoelectrics |
| title_sort | lattice defect engineering advances n type pbse thermoelectrics |
| url | https://doi.org/10.1038/s41467-025-56003-9 |
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