APA (7th ed.) Citation

Yatsyna, D. A., Migas, D. B., Arsitov, Y. S., Filonov, A. B., & Kolosnitsyn, B. S. EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES. Educational institution «Belarusian State University of Informatics and Radioelectronics».

Chicago Style (17th ed.) Citation

Yatsyna, D. A., D. B. Migas, Y. S. Arsitov, A. B. Filonov, and B. S. Kolosnitsyn. EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES. Educational institution «Belarusian State University of Informatics and Radioelectronics».

MLA (9th ed.) Citation

Yatsyna, D. A., et al. EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES. Educational institution «Belarusian State University of Informatics and Radioelectronics».