Research on Switching Characteristics of 3 300 V Full SiC MOSFET Power Module
Depending on the advantages of SiC MOSFET with faster switching and lower on-state losses, the switching characteristics of a 3 300 V full SiC MOSFET device were studied to make better use of the device. Firstly, the switching processes of the SiC device were illustrated in theory, and the quantifia...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2020-01-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2020.01.007 |
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