Gate-Controlled Three-Terminal ZnO Nanoparticle Optoelectronic Synaptic Devices for In-Sensor Neuromorphic Memory Applications

Gate-Controlled Three-Terminal ZnO Nanoparticle Optoelectronic Synaptic Devices for In-Sensor Neuromorphic Memory Applications

This study reports a gate-tunable three-terminal optoelectronic synaptic device based on an Al/ZnO nanoparticles (NPs)/SiO<sub>2</sub>/Si structure for neuromorphic in-sensor memory applications. The ZnO NP film, fabricated via spin coating, exhibited strong UV-induced excitatory post-sy...

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Bibliographic Details
Main Authors: Dabin Jeon, Seung Hun Lee, Sung-Nam Lee
Format: Article
Language:English
Published: MDPI AG 2025-06-01
Series:Nanomaterials
Subjects:
ZnO
nanoparticle
3-terminal
synapse
optoelectronic
neuromorphic
Online Access:https://www.mdpi.com/2079-4991/15/12/908
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