Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions
Abstract In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced elec...
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| Format: | Article |
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Nature Portfolio
2025-02-01
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| Series: | Scientific Reports |
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| Online Access: | https://doi.org/10.1038/s41598-025-88281-0 |
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| author | Iman Chahardah Cherik Saeed Mohammadi Paul K. Hurley Lida Ansari Farzan Gity |
| author_facet | Iman Chahardah Cherik Saeed Mohammadi Paul K. Hurley Lida Ansari Farzan Gity |
| author_sort | Iman Chahardah Cherik |
| collection | DOAJ |
| description | Abstract In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced electrostatic control. We utilized a two-step numerical simulation approach grounded in the Schrödinger-Poisson equations to evaluate the performance of our proposed device and accurately calculate the ON-state current. Additionally, we assessed the influence of defects at the heterojunction on the performance of our device. Under quantum mechanical assumptions, parameters such as I ON = 23.8 µA/µm, SS AVG = 12.03 mV/dec, and the I ON/I OFF ratio = 4.88 × 1010 indicate that our structure is a promising candidate for high-performance applications. |
| format | Article |
| id | doaj-art-a6e586e1e3be448e916e27bb26df1eba |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-a6e586e1e3be448e916e27bb26df1eba2025-02-09T12:34:49ZengNature PortfolioScientific Reports2045-23222025-02-011511710.1038/s41598-025-88281-0Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptionsIman Chahardah Cherik0Saeed Mohammadi1Paul K. Hurley2Lida Ansari3Farzan Gity4Department of Electrical and Computer Engineering, Semnan UniversityDepartment of Electrical and Computer Engineering, Semnan UniversityMicroNano Systems Centre, Tyndall National Institute, University College CorkMicroNano Systems Centre, Tyndall National Institute, University College CorkMicroNano Systems Centre, Tyndall National Institute, University College CorkAbstract In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced electrostatic control. We utilized a two-step numerical simulation approach grounded in the Schrödinger-Poisson equations to evaluate the performance of our proposed device and accurately calculate the ON-state current. Additionally, we assessed the influence of defects at the heterojunction on the performance of our device. Under quantum mechanical assumptions, parameters such as I ON = 23.8 µA/µm, SS AVG = 12.03 mV/dec, and the I ON/I OFF ratio = 4.88 × 1010 indicate that our structure is a promising candidate for high-performance applications.https://doi.org/10.1038/s41598-025-88281-0TFETDopinglessQuantum confinementTrap-assisted tunnelingHeterojunction |
| spellingShingle | Iman Chahardah Cherik Saeed Mohammadi Paul K. Hurley Lida Ansari Farzan Gity Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions Scientific Reports TFET Dopingless Quantum confinement Trap-assisted tunneling Heterojunction |
| title | Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions |
| title_full | Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions |
| title_fullStr | Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions |
| title_full_unstemmed | Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions |
| title_short | Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions |
| title_sort | investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions |
| topic | TFET Dopingless Quantum confinement Trap-assisted tunneling Heterojunction |
| url | https://doi.org/10.1038/s41598-025-88281-0 |
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