Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions
Abstract In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced elec...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-02-01
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| Series: | Scientific Reports |
| Subjects: | |
| Online Access: | https://doi.org/10.1038/s41598-025-88281-0 |
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| Summary: | Abstract In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced electrostatic control. We utilized a two-step numerical simulation approach grounded in the Schrödinger-Poisson equations to evaluate the performance of our proposed device and accurately calculate the ON-state current. Additionally, we assessed the influence of defects at the heterojunction on the performance of our device. Under quantum mechanical assumptions, parameters such as I ON = 23.8 µA/µm, SS AVG = 12.03 mV/dec, and the I ON/I OFF ratio = 4.88 × 1010 indicate that our structure is a promising candidate for high-performance applications. |
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| ISSN: | 2045-2322 |