Effect of Hole Extraction from the Base Region of a Silicon <i>p–n–p</i> Transistor on its Reactive Impedance
Transistor structures are the basic elements of integrated circuitry and are often used to create not only transistors themselves, but also diodes, resistors, and capacitors. Determining the mechanism of the occurrence of inductive type impedance in semiconductor structures is an urgent task, the so...
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| Main Authors: | N. I. Gorbachuk, N. A. Poklonski, Ya. N. Marochkina, S. V. Shpakovski |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Belarusian National Technical University
2019-12-01
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| Series: | Приборы и методы измерений |
| Subjects: | |
| Online Access: | https://pimi.bntu.by/jour/article/view/518 |
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