APA (7th ed.) Citation

Gorbachuk, N. I., Poklonski, N. A., Marochkina, Y. N., & Shpakovski, S. V. Effect of Hole Extraction from the Base Region of a Silicon <i>p–n–p</i> Transistor on its Reactive Impedance. Belarusian National Technical University.

Chicago Style (17th ed.) Citation

Gorbachuk, N. I., N. A. Poklonski, Ya. N. Marochkina, and S. V. Shpakovski. Effect of Hole Extraction from the Base Region of a Silicon <i>p–n–p</i> Transistor on Its Reactive Impedance. Belarusian National Technical University.

MLA (9th ed.) Citation

Gorbachuk, N. I., et al. Effect of Hole Extraction from the Base Region of a Silicon <i>p–n–p</i> Transistor on Its Reactive Impedance. Belarusian National Technical University.