Efficiency Improvement of InGaP/SiGe Tandem Solar Cell Using Si0.18Ge0.82 Graded Buffer Regions
<p><!-- [if gte mso 9]><xml> <w:WordDocument> <w:View>Normal</w:View> <w:Zoom>0</w:Zoom> <w:TrackMoves/> <w:TrackFormatting/> <w:PunctuationKerning/> <w:ValidateAgainstSchemas/> <w:SaveIfXMLInvalid>false<...
Saved in:
| Main Authors: | Mojtaba Shahraki, Majid Ghadrdan |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Islamic Azad University, Marvdasht Branch
2024-10-01
|
| Series: | Journal of Optoelectronical Nanostructures |
| Subjects: | |
| Online Access: | https://sanad.iau.ir/journal/jopn/Article/1182936 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Observation of magnetic skyrmion lattice in Cr0.82Mn0.18Ge by small-angle neutron scattering
by: Victor Ukleev, et al.
Published: (2025-01-01) -
SiGe high-frequency pulse-width modulation for low-noise applications
by: John Suarez
Published: (2024-12-01) -
A 79 GHz SiGe Doherty Power Amplifier Suitable for Next-Generation Automotive Radar
by: Jan Schoepfel, et al.
Published: (2024-01-01) -
Design and Analysis of an Ultra-Wideband High-Precision Active Phase Shifter in 0.18 μm SiGe BiCMOS Technology
by: Hao Jiang, et al.
Published: (2025-05-01) -
Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate
by: Chao Zhang, et al.
Published: (2018-01-01)