Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor
This work presents simulation study and analysis of nanoscale III-V Heterojunction Gate All Around Tunnel Field Effect Transistor, along with the extraction of small signal parameters of the device. Transfer characteristics and output characteristics of the device were observed. The device is simula...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2017-07-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04004.pdf |
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