Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor
This work presents simulation study and analysis of nanoscale III-V Heterojunction Gate All Around Tunnel Field Effect Transistor, along with the extraction of small signal parameters of the device. Transfer characteristics and output characteristics of the device were observed. The device is simula...
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| Format: | Article |
| Language: | English |
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Sumy State University
2017-07-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04004.pdf |
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| author | ManjulaВ Vijh R.S.В Gupta SujataВ Pandey |
| author_facet | ManjulaВ Vijh R.S.В Gupta SujataВ Pandey |
| author_sort | ManjulaВ Vijh |
| collection | DOAJ |
| description | This work presents simulation study and analysis of nanoscale III-V Heterojunction Gate All Around Tunnel Field Effect Transistor, along with the extraction of small signal parameters of the device. Transfer characteristics and output characteristics of the device were observed. The device is simulated for extraction of small signal parameters such as transconductance, gate-source capacitance, gate-drain capacitance, by varying doping concentration of drain region and channel length. Cut-off frequency of the device is also obtained. The results reported agree well with the data available in literature. |
| format | Article |
| id | doaj-art-a64c04a86c874001b490b367f7e772ed |
| institution | Kabale University |
| issn | 2077-6772 |
| language | English |
| publishDate | 2017-07-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-a64c04a86c874001b490b367f7e772ed2025-08-20T03:38:44ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722017-07-019404004-104004-410.21272/jnep.9(4).04004Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect TransistorManjulaВ Vijh0R.S.В Gupta1SujataВ Pandey2Amity University Uttar Pradesh, Noida, IndiaMaharaja Agrasen Institute of Technology, New Delhi, IndiaAmity Institute of Telecom Engineering and Management, Amity University Uttar Pradesh, Noida, IndiaThis work presents simulation study and analysis of nanoscale III-V Heterojunction Gate All Around Tunnel Field Effect Transistor, along with the extraction of small signal parameters of the device. Transfer characteristics and output characteristics of the device were observed. The device is simulated for extraction of small signal parameters such as transconductance, gate-source capacitance, gate-drain capacitance, by varying doping concentration of drain region and channel length. Cut-off frequency of the device is also obtained. The results reported agree well with the data available in literature.http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04004.pdfGate All Around Tunnel FETHeterojunctionSmall signal parametersBroken-ga |
| spellingShingle | ManjulaВ Vijh R.S.В Gupta SujataВ Pandey Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor Журнал нано- та електронної фізики Gate All Around Tunnel FET Heterojunction Small signal parameters Broken-ga |
| title | Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor |
| title_full | Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor |
| title_fullStr | Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor |
| title_full_unstemmed | Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor |
| title_short | Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor |
| title_sort | small signal parameter extraction of iii v heterojunction surrounding gate tunnel field effect transistor |
| topic | Gate All Around Tunnel FET Heterojunction Small signal parameters Broken-ga |
| url | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04004.pdf |
| work_keys_str_mv | AT manjulavvijh smallsignalparameterextractionofiiivheterojunctionsurroundinggatetunnelfieldeffecttransistor AT rsvgupta smallsignalparameterextractionofiiivheterojunctionsurroundinggatetunnelfieldeffecttransistor AT sujatavpandey smallsignalparameterextractionofiiivheterojunctionsurroundinggatetunnelfieldeffecttransistor |