Dual-Layer Anomalous Hall Effect Sensor for Enhanced Accuracy and Range in Magnetic Field Detection
This study introduces a method aimed at enhancing both the accuracy and the range of magnetic field sensors, which are two critical parameters, in a novel NiCo<sub>2</sub>O<sub>4</sub>-based anomalous Hall effect sensor. To fine-tune the linear range of the sensor, we introdu...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-03-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/7/527 |
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| Summary: | This study introduces a method aimed at enhancing both the accuracy and the range of magnetic field sensors, which are two critical parameters, in a novel NiCo<sub>2</sub>O<sub>4</sub>-based anomalous Hall effect sensor. To fine-tune the linear range of the sensor, we introduced epitaxial strain using a MgAl<sub>2</sub>O<sub>4</sub> cover layer, which significantly influenced the strain-modulated magnetic anisotropy. A NiCo<sub>2</sub>O<sub>4</sub>/MgAl<sub>2</sub>O<sub>4</sub>/NiCo<sub>2</sub>O<sub>4</sub>/MgAl<sub>2</sub>O<sub>4</sub> heterostructure was further constructed, achieving differentiation in the material characteristics across both upper and lower NiCo<sub>2</sub>O<sub>4</sub> layers through the modulation of thickness and strain. A dual-layer Hall bar was designed to enhance the integration of the sensor, offering varied detection ranges. This approach enabled the realization of ultrahigh sensitivity, measuring 10,000 V/(AT) within a ±0.1 mT range, and a competitive sensitivity of 60 V/(AT) within a ±5 mT range. By reducing the thickness of the top NiCo<sub>2</sub>O<sub>4</sub> layer, an ultra-wide measurement range of ±1000 mT was also achieved. These results highlight the considerable promise of NiCo<sub>2</sub>O<sub>4</sub>-based anomalous Hall effect devices as compact, multi-range tools in the domain of magnetic sensing technology. |
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| ISSN: | 2079-4991 |