Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers
In this study, we investigated numerically the effect of aluminum concentration, temperature and well width on optical gain GaN / AlxGa1 – xN quantum well lasers, taken into account effective mass approximation. The numerical results clearly show that the increasing of well width, and decreasing of...
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| Format: | Article |
| Language: | English |
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Sumy State University
2015-12-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2015/4/articles/jnep_2015_V7_04061.pdf |
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| author | K. Fellaoui D. Abouelaoualim A. Elkadadra A. Oueriagli |
| author_facet | K. Fellaoui D. Abouelaoualim A. Elkadadra A. Oueriagli |
| author_sort | K. Fellaoui |
| collection | DOAJ |
| description | In this study, we investigated numerically the effect of aluminum concentration, temperature and well width on optical gain GaN / AlxGa1 – xN quantum well lasers, taken into account effective mass approximation. The numerical results clearly show that the increasing of well width, and decreasing of temperature and Aluminum concentration, the optical gain increases. |
| format | Article |
| id | doaj-art-a5e9319377b240ea912a3dfdb0ad41e7 |
| institution | Kabale University |
| issn | 2077-6772 |
| language | English |
| publishDate | 2015-12-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-a5e9319377b240ea912a3dfdb0ad41e72025-08-20T03:38:44ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722015-12-017404061-104061-3Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well LasersK. Fellaoui0D. Abouelaoualim1A. Elkadadra2A. Oueriagli3LPSCM, Department of Physics Faculty of Sciences Semlalia Cadi Ayaad University P.O. Box 2390, 40000 Marrakech, MoroccoLPSCM, Department of Physics Faculty of Sciences Semlalia Cadi Ayaad University P.O. Box 2390, 40000 Marrakech, MoroccoLPSCM, Department of Physics Faculty of Sciences Semlalia Cadi Ayaad University P.O. Box 2390, 40000 Marrakech, MoroccoLPSCM, Department of Physics Faculty of Sciences Semlalia Cadi Ayaad University P.O. Box 2390, 40000 Marrakech, MoroccoIn this study, we investigated numerically the effect of aluminum concentration, temperature and well width on optical gain GaN / AlxGa1 – xN quantum well lasers, taken into account effective mass approximation. The numerical results clearly show that the increasing of well width, and decreasing of temperature and Aluminum concentration, the optical gain increases.http://jnep.sumdu.edu.ua/download/numbers/2015/4/articles/jnep_2015_V7_04061.pdfIII-NitrideAlGaN / GaN quantum wells (QWs)Optical gainLaser diode |
| spellingShingle | K. Fellaoui D. Abouelaoualim A. Elkadadra A. Oueriagli Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers Журнал нано- та електронної фізики III-Nitride AlGaN / GaN quantum wells (QWs) Optical gain Laser diode |
| title | Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers |
| title_full | Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers |
| title_fullStr | Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers |
| title_full_unstemmed | Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers |
| title_short | Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers |
| title_sort | theoretical analysis of optical gain in gan alxga1 x n quantum well lasers |
| topic | III-Nitride AlGaN / GaN quantum wells (QWs) Optical gain Laser diode |
| url | http://jnep.sumdu.edu.ua/download/numbers/2015/4/articles/jnep_2015_V7_04061.pdf |
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