Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers

In this study, we investigated numerically the effect of aluminum concentration, temperature and well width on optical gain GaN / AlxGa1 – xN quantum well lasers, taken into account effective mass approximation. The numerical results clearly show that the increasing of well width, and decreasing of...

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Bibliographic Details
Main Authors: K. Fellaoui, D. Abouelaoualim, A. Elkadadra, A. Oueriagli
Format: Article
Language:English
Published: Sumy State University 2015-12-01
Series:Журнал нано- та електронної фізики
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Online Access:http://jnep.sumdu.edu.ua/download/numbers/2015/4/articles/jnep_2015_V7_04061.pdf
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Summary:In this study, we investigated numerically the effect of aluminum concentration, temperature and well width on optical gain GaN / AlxGa1 – xN quantum well lasers, taken into account effective mass approximation. The numerical results clearly show that the increasing of well width, and decreasing of temperature and Aluminum concentration, the optical gain increases.
ISSN:2077-6772