A Review of Thermal Design for IGBT Module
In this paper, the thermal characteristics and thermal design of IGBT module are reviewed. Firstly, the thermal network model and its dependence on the packaging material’s thermal performance and dimensions are addressed. Then, the thermal design of IGBT module is investigated in terms of semicondu...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | zho |
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State Grid Energy Research Institute
2020-12-01
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| Series: | Zhongguo dianli |
| Subjects: | |
| Online Access: | https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.202007137 |
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| _version_ | 1850052798752751616 |
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| author | Guoyou LIU Yangang WANG Haihui LUO Fang QI Xiang LI Yibo WU |
| author_facet | Guoyou LIU Yangang WANG Haihui LUO Fang QI Xiang LI Yibo WU |
| author_sort | Guoyou LIU |
| collection | DOAJ |
| description | In this paper, the thermal characteristics and thermal design of IGBT module are reviewed. Firstly, the thermal network model and its dependence on the packaging material’s thermal performance and dimensions are addressed. Then, the thermal design of IGBT module is investigated in terms of semiconductor chip, packaging structure and material. Finally, the main thermal design aspects of conventional IGBT module and new press-pack IGBT module are presented. |
| format | Article |
| id | doaj-art-a4f1a66d17f84af1bb7a0a718986b1c0 |
| institution | DOAJ |
| issn | 1004-9649 |
| language | zho |
| publishDate | 2020-12-01 |
| publisher | State Grid Energy Research Institute |
| record_format | Article |
| series | Zhongguo dianli |
| spelling | doaj-art-a4f1a66d17f84af1bb7a0a718986b1c02025-08-20T02:52:42ZzhoState Grid Energy Research InstituteZhongguo dianli1004-96492020-12-015312556110.11930/j.issn.1004-9649.202007137zgdl-53-12-liuguoyouA Review of Thermal Design for IGBT ModuleGuoyou LIU0Yangang WANG1Haihui LUO2Fang QI3Xiang LI4Yibo WU5State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, 412001, ChinaState Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, 412001, ChinaState Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, 412001, ChinaZhuzhou CRRC Times Electric Semiconductor Co., Ltd., Zhuzhou, 412001, ChinaState Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, 412001, ChinaState Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, 412001, ChinaIn this paper, the thermal characteristics and thermal design of IGBT module are reviewed. Firstly, the thermal network model and its dependence on the packaging material’s thermal performance and dimensions are addressed. Then, the thermal design of IGBT module is investigated in terms of semiconductor chip, packaging structure and material. Finally, the main thermal design aspects of conventional IGBT module and new press-pack IGBT module are presented.https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.202007137igbt modulethermal designreliability |
| spellingShingle | Guoyou LIU Yangang WANG Haihui LUO Fang QI Xiang LI Yibo WU A Review of Thermal Design for IGBT Module Zhongguo dianli igbt module thermal design reliability |
| title | A Review of Thermal Design for IGBT Module |
| title_full | A Review of Thermal Design for IGBT Module |
| title_fullStr | A Review of Thermal Design for IGBT Module |
| title_full_unstemmed | A Review of Thermal Design for IGBT Module |
| title_short | A Review of Thermal Design for IGBT Module |
| title_sort | review of thermal design for igbt module |
| topic | igbt module thermal design reliability |
| url | https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.202007137 |
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