Threshold Voltage Shift of Flexible P-Type Poly-Silicon Thin Film Transistors Under Illumination Stress
The reliability of flexible p-type low temperature poly-silicon thin film transistors (TFTs) under sole illumination stress was investigated. As the TFT was exposed to illumination, the transfer characteristic curves of the TFTs shifted positively, accompanied by an increase in the off-state current...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11112689/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|