Threshold Voltage Shift of Flexible P-Type Poly-Silicon Thin Film Transistors Under Illumination Stress
The reliability of flexible p-type low temperature poly-silicon thin film transistors (TFTs) under sole illumination stress was investigated. As the TFT was exposed to illumination, the transfer characteristic curves of the TFTs shifted positively, accompanied by an increase in the off-state current...
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| Format: | Article |
| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/11112689/ |
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| author | Weipeng Ji Huaisheng Wang Mingxiang Wang Dongli Zhang Nannan Lv Qi Shan |
| author_facet | Weipeng Ji Huaisheng Wang Mingxiang Wang Dongli Zhang Nannan Lv Qi Shan |
| author_sort | Weipeng Ji |
| collection | DOAJ |
| description | The reliability of flexible p-type low temperature poly-silicon thin film transistors (TFTs) under sole illumination stress was investigated. As the TFT was exposed to illumination, the transfer characteristic curves of the TFTs shifted positively, accompanied by an increase in the off-state current. Through altering the wavelength and intensity of the light, the degradation mechanism for TFTs under illumination stresses can be attributed to photoexcited carriers and residual hydrogen diffusion from the Si3N4 layer to air, leading to a forward shift in the threshold voltage. Moreover, TFTs exposed to the air for an extended period can also effectively remove residual hydrogen in the silicon nitride layer, thereby effectively suppressing photoinduced degradation of the device and improving its reliability. |
| format | Article |
| id | doaj-art-a4daaed2191c43f6af63b029d32129d8 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-a4daaed2191c43f6af63b029d32129d82025-08-22T23:09:18ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-011396997510.1109/JEDS.2025.359580811112689Threshold Voltage Shift of Flexible P-Type Poly-Silicon Thin Film Transistors Under Illumination StressWeipeng Ji0Huaisheng Wang1https://orcid.org/0000-0003-4672-6678Mingxiang Wang2https://orcid.org/0000-0002-6087-4979Dongli Zhang3https://orcid.org/0000-0002-0556-5532Nannan Lv4https://orcid.org/0000-0001-9318-1805Qi Shan5School of Electronic and Information Engineering, Soochow University, Suzhou, ChinaSchool of Electronic and Information Engineering, Soochow University, Suzhou, ChinaSchool of Electronic and Information Engineering, Soochow University, Suzhou, ChinaSchool of Electronic and Information Engineering, Soochow University, Suzhou, ChinaSchool of Electronic and Information Engineering, Soochow University, Suzhou, ChinaSchool of Electronic and Information Engineering, Soochow University, Suzhou, ChinaThe reliability of flexible p-type low temperature poly-silicon thin film transistors (TFTs) under sole illumination stress was investigated. As the TFT was exposed to illumination, the transfer characteristic curves of the TFTs shifted positively, accompanied by an increase in the off-state current. Through altering the wavelength and intensity of the light, the degradation mechanism for TFTs under illumination stresses can be attributed to photoexcited carriers and residual hydrogen diffusion from the Si3N4 layer to air, leading to a forward shift in the threshold voltage. Moreover, TFTs exposed to the air for an extended period can also effectively remove residual hydrogen in the silicon nitride layer, thereby effectively suppressing photoinduced degradation of the device and improving its reliability.https://ieeexplore.ieee.org/document/11112689/Thin-film transistors (TFTs)hydrogenilluminationphoto-induced instability |
| spellingShingle | Weipeng Ji Huaisheng Wang Mingxiang Wang Dongli Zhang Nannan Lv Qi Shan Threshold Voltage Shift of Flexible P-Type Poly-Silicon Thin Film Transistors Under Illumination Stress IEEE Journal of the Electron Devices Society Thin-film transistors (TFTs) hydrogen illumination photo-induced instability |
| title | Threshold Voltage Shift of Flexible P-Type Poly-Silicon Thin Film Transistors Under Illumination Stress |
| title_full | Threshold Voltage Shift of Flexible P-Type Poly-Silicon Thin Film Transistors Under Illumination Stress |
| title_fullStr | Threshold Voltage Shift of Flexible P-Type Poly-Silicon Thin Film Transistors Under Illumination Stress |
| title_full_unstemmed | Threshold Voltage Shift of Flexible P-Type Poly-Silicon Thin Film Transistors Under Illumination Stress |
| title_short | Threshold Voltage Shift of Flexible P-Type Poly-Silicon Thin Film Transistors Under Illumination Stress |
| title_sort | threshold voltage shift of flexible p type poly silicon thin film transistors under illumination stress |
| topic | Thin-film transistors (TFTs) hydrogen illumination photo-induced instability |
| url | https://ieeexplore.ieee.org/document/11112689/ |
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