A Near-Ultraviolet Photodetector Based on the TaC: Cu/4 H Silicon Carbide Heterostructure
Photodetectors (PDs) based on 4H silicon carbide (SiC) have garnered significant interest due to their exceptional optoelectronic properties. However, their photoresponse is typically restricted to the ultraviolet (UV) region, with limited light absorption beyond 380 nm, which constrains their utili...
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2025-01-01
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| author | Salah Abdo Khalil As’ham Ambali Alade Odebowale Sanjida Akter Amer Abdulghani Ibrahim A. M. Al Ani Haroldo Hattori Andrey E. Miroshnichenko |
| author_facet | Salah Abdo Khalil As’ham Ambali Alade Odebowale Sanjida Akter Amer Abdulghani Ibrahim A. M. Al Ani Haroldo Hattori Andrey E. Miroshnichenko |
| author_sort | Salah Abdo |
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| description | Photodetectors (PDs) based on 4H silicon carbide (SiC) have garnered significant interest due to their exceptional optoelectronic properties. However, their photoresponse is typically restricted to the ultraviolet (UV) region, with limited light absorption beyond 380 nm, which constrains their utility in visible light detection applications. To overcome this limitation, an efficient photodetector was developed using an alloy with TaC (80%) and Cu (20%) on a 4H n-type SiC substrate, enabling effective light detection at 405 nm. The device exhibited high performance with a high photoresponsivity of 1.66 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msup><mrow><mi mathvariant="normal">A</mi><mi mathvariant="normal">W</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></semantics></math></inline-formula> and a specific detectivity of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>2.69</mn><mo>×</mo><msup><mrow><mn>10</mn></mrow><mrow><mn>8</mn></mrow></msup></mrow></semantics></math></inline-formula> Jones at 405 nm. The superior performance of the device is ascribed to the enhanced electrical conductivity and optical absorption of the TaC: Cu layer on the 4H SiC substrate, particularly in the near-ultraviolet region. This photodetector combines ease of fabrication with significant performance improvements, expanding the potential applications of 4H SiC in high-temperature optoelectronics. It also introduces a promising pathway for enhancing 4H SiC-based photodetection capabilities across broader spectral ranges. |
| format | Article |
| id | doaj-art-a4b9d89d3e954479bbef7d3f7bcb07c6 |
| institution | Kabale University |
| issn | 2076-3417 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj-art-a4b9d89d3e954479bbef7d3f7bcb07c62025-01-24T13:21:32ZengMDPI AGApplied Sciences2076-34172025-01-0115297010.3390/app15020970A Near-Ultraviolet Photodetector Based on the TaC: Cu/4 H Silicon Carbide HeterostructureSalah Abdo0Khalil As’ham1Ambali Alade Odebowale2Sanjida Akter3Amer Abdulghani4Ibrahim A. M. Al Ani5Haroldo Hattori6Andrey E. Miroshnichenko7School of Engineering and Information Technology, University of New South Wales at Canberra, Northcott Drive, Canberra, ACT 2610, AustraliaSchool of Engineering and Information Technology, University of New South Wales at Canberra, Northcott Drive, Canberra, ACT 2610, AustraliaSchool of Engineering and Information Technology, University of New South Wales at Canberra, Northcott Drive, Canberra, ACT 2610, AustraliaSchool of Engineering and Information Technology, University of New South Wales at Canberra, Northcott Drive, Canberra, ACT 2610, AustraliaSchool of Engineering and Information Technology, University of New South Wales at Canberra, Northcott Drive, Canberra, ACT 2610, AustraliaSchool of Engineering and Information Technology, University of New South Wales at Canberra, Northcott Drive, Canberra, ACT 2610, AustraliaSchool of Engineering and Information Technology, University of New South Wales at Canberra, Northcott Drive, Canberra, ACT 2610, AustraliaSchool of Engineering and Information Technology, University of New South Wales at Canberra, Northcott Drive, Canberra, ACT 2610, AustraliaPhotodetectors (PDs) based on 4H silicon carbide (SiC) have garnered significant interest due to their exceptional optoelectronic properties. However, their photoresponse is typically restricted to the ultraviolet (UV) region, with limited light absorption beyond 380 nm, which constrains their utility in visible light detection applications. To overcome this limitation, an efficient photodetector was developed using an alloy with TaC (80%) and Cu (20%) on a 4H n-type SiC substrate, enabling effective light detection at 405 nm. The device exhibited high performance with a high photoresponsivity of 1.66 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msup><mrow><mi mathvariant="normal">A</mi><mi mathvariant="normal">W</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></semantics></math></inline-formula> and a specific detectivity of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>2.69</mn><mo>×</mo><msup><mrow><mn>10</mn></mrow><mrow><mn>8</mn></mrow></msup></mrow></semantics></math></inline-formula> Jones at 405 nm. The superior performance of the device is ascribed to the enhanced electrical conductivity and optical absorption of the TaC: Cu layer on the 4H SiC substrate, particularly in the near-ultraviolet region. This photodetector combines ease of fabrication with significant performance improvements, expanding the potential applications of 4H SiC in high-temperature optoelectronics. It also introduces a promising pathway for enhancing 4H SiC-based photodetection capabilities across broader spectral ranges.https://www.mdpi.com/2076-3417/15/2/9704H silicon carbide (SiC)tantalum carbide (TaC)near ultraviolet (NUV) photodetectorresponsivity |
| spellingShingle | Salah Abdo Khalil As’ham Ambali Alade Odebowale Sanjida Akter Amer Abdulghani Ibrahim A. M. Al Ani Haroldo Hattori Andrey E. Miroshnichenko A Near-Ultraviolet Photodetector Based on the TaC: Cu/4 H Silicon Carbide Heterostructure Applied Sciences 4H silicon carbide (SiC) tantalum carbide (TaC) near ultraviolet (NUV) photodetector responsivity |
| title | A Near-Ultraviolet Photodetector Based on the TaC: Cu/4 H Silicon Carbide Heterostructure |
| title_full | A Near-Ultraviolet Photodetector Based on the TaC: Cu/4 H Silicon Carbide Heterostructure |
| title_fullStr | A Near-Ultraviolet Photodetector Based on the TaC: Cu/4 H Silicon Carbide Heterostructure |
| title_full_unstemmed | A Near-Ultraviolet Photodetector Based on the TaC: Cu/4 H Silicon Carbide Heterostructure |
| title_short | A Near-Ultraviolet Photodetector Based on the TaC: Cu/4 H Silicon Carbide Heterostructure |
| title_sort | near ultraviolet photodetector based on the tac cu 4 h silicon carbide heterostructure |
| topic | 4H silicon carbide (SiC) tantalum carbide (TaC) near ultraviolet (NUV) photodetector responsivity |
| url | https://www.mdpi.com/2076-3417/15/2/970 |
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