An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs
High-electron mobility transistors (HEMTs) employing AlGaN/GaN heterostructures are suitable for high-power and high-frequency applications. To meet target specifications, GaN HEMTs must be designed and optimized by accurately considering the coupling of electrical and thermal characteristics, from...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10836823/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832583993100337152 |
|---|---|
| author | Yicong Dong Eiji Yagyu Takashi Matsuda Koon Hoo Teo Chungwei Lin Shaloo Rakheja |
| author_facet | Yicong Dong Eiji Yagyu Takashi Matsuda Koon Hoo Teo Chungwei Lin Shaloo Rakheja |
| author_sort | Yicong Dong |
| collection | DOAJ |
| description | High-electron mobility transistors (HEMTs) employing AlGaN/GaN heterostructures are suitable for high-power and high-frequency applications. To meet target specifications, GaN HEMTs must be designed and optimized by accurately considering the coupling of electrical and thermal characteristics, from the static to the pulsed regimes of operation. Toward this, we implement an electro-thermal modeling and simulation framework for experimentally fabricated GaN on SiC HEMTs and use the framework to predict the high-temperature performance of the technology, up to 448 K. We utilize the transient measurement data at different ambient temperatures to extract the trap characteristics, which are important to understand from the RF dispersion perspective. Our work highlights the significance of the thermal boundary conditions at the source, drain, and gate metal electrodes and the impact of heat dissipation paths on the lattice temperature rise and I-V characteristics. Overall, our work provides a physical insight into the thermal response of GaN HEMTs and can facilitate suitable thermal management strategies of the device over a broad range of DC and transient operating conditions. |
| format | Article |
| id | doaj-art-a48b097ae408438d866e8d899287ebcd |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-a48b097ae408438d866e8d899287ebcd2025-01-28T00:00:33ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-0113546510.1109/JEDS.2025.352830710836823An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTsYicong Dong0https://orcid.org/0000-0002-1753-9737Eiji Yagyu1https://orcid.org/0009-0005-7966-3492Takashi Matsuda2Koon Hoo Teo3Chungwei Lin4https://orcid.org/0000-0003-1510-5414Shaloo Rakheja5https://orcid.org/0000-0001-7501-275XHolonyak Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, USAMitsubishi Electric Corporation, Advanced Technology R&D Center, Amagasaki, JapanMitsubishi Electric Corporation, Advanced Technology R&D Center, Amagasaki, JapanMitsubishi Electric Research Laboratories, Cambridge, MA, USAMitsubishi Electric Research Laboratories, Cambridge, MA, USAHolonyak Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, USAHigh-electron mobility transistors (HEMTs) employing AlGaN/GaN heterostructures are suitable for high-power and high-frequency applications. To meet target specifications, GaN HEMTs must be designed and optimized by accurately considering the coupling of electrical and thermal characteristics, from the static to the pulsed regimes of operation. Toward this, we implement an electro-thermal modeling and simulation framework for experimentally fabricated GaN on SiC HEMTs and use the framework to predict the high-temperature performance of the technology, up to 448 K. We utilize the transient measurement data at different ambient temperatures to extract the trap characteristics, which are important to understand from the RF dispersion perspective. Our work highlights the significance of the thermal boundary conditions at the source, drain, and gate metal electrodes and the impact of heat dissipation paths on the lattice temperature rise and I-V characteristics. Overall, our work provides a physical insight into the thermal response of GaN HEMTs and can facilitate suitable thermal management strategies of the device over a broad range of DC and transient operating conditions.https://ieeexplore.ieee.org/document/10836823/Gallium nitrideHEMTsthermodynamic transportTCAD simulationsdrain-current transients |
| spellingShingle | Yicong Dong Eiji Yagyu Takashi Matsuda Koon Hoo Teo Chungwei Lin Shaloo Rakheja An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs IEEE Journal of the Electron Devices Society Gallium nitride HEMTs thermodynamic transport TCAD simulations drain-current transients |
| title | An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs |
| title_full | An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs |
| title_fullStr | An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs |
| title_full_unstemmed | An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs |
| title_short | An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs |
| title_sort | accurate electrical and thermal co simulation framework for modeling high temperature dc and pulsed i v characteristics of gan hemts |
| topic | Gallium nitride HEMTs thermodynamic transport TCAD simulations drain-current transients |
| url | https://ieeexplore.ieee.org/document/10836823/ |
| work_keys_str_mv | AT yicongdong anaccurateelectricalandthermalcosimulationframeworkformodelinghightemperaturedcandpulsedivcharacteristicsofganhemts AT eijiyagyu anaccurateelectricalandthermalcosimulationframeworkformodelinghightemperaturedcandpulsedivcharacteristicsofganhemts AT takashimatsuda anaccurateelectricalandthermalcosimulationframeworkformodelinghightemperaturedcandpulsedivcharacteristicsofganhemts AT koonhooteo anaccurateelectricalandthermalcosimulationframeworkformodelinghightemperaturedcandpulsedivcharacteristicsofganhemts AT chungweilin anaccurateelectricalandthermalcosimulationframeworkformodelinghightemperaturedcandpulsedivcharacteristicsofganhemts AT shaloorakheja anaccurateelectricalandthermalcosimulationframeworkformodelinghightemperaturedcandpulsedivcharacteristicsofganhemts AT yicongdong accurateelectricalandthermalcosimulationframeworkformodelinghightemperaturedcandpulsedivcharacteristicsofganhemts AT eijiyagyu accurateelectricalandthermalcosimulationframeworkformodelinghightemperaturedcandpulsedivcharacteristicsofganhemts AT takashimatsuda accurateelectricalandthermalcosimulationframeworkformodelinghightemperaturedcandpulsedivcharacteristicsofganhemts AT koonhooteo accurateelectricalandthermalcosimulationframeworkformodelinghightemperaturedcandpulsedivcharacteristicsofganhemts AT chungweilin accurateelectricalandthermalcosimulationframeworkformodelinghightemperaturedcandpulsedivcharacteristicsofganhemts AT shaloorakheja accurateelectricalandthermalcosimulationframeworkformodelinghightemperaturedcandpulsedivcharacteristicsofganhemts |