Study on Self-Sharpening Mechanism and Polishing Performance of Triethylamine Alcohol on Gel Polishing Discs
To address the issue of surface glazing that occurs during prolonged polishing with gel tools, this study employs a triethanolamine (TEA)-based polishing fluid system to enhance the self-sharpening capability of the gel polishing disc. The inhibitory mechanism of TEA concentration on disc glazing is...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-07-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/7/816 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | To address the issue of surface glazing that occurs during prolonged polishing with gel tools, this study employs a triethanolamine (TEA)-based polishing fluid system to enhance the self-sharpening capability of the gel polishing disc. The inhibitory mechanism of TEA concentration on disc glazing is systematically analyzed, along with its impact on the gel disc’s frictional wear behaviour. Furthermore, the synergistic effects of process parameters on both surface quality and material removal rate (<i>MRR</i>) of SiC are examined. The results demonstrate that TEA concentration is a critical factor in regulating polishing performance. At an optimal concentration of 4 wt%, an ideal balance between chemical chelation and mechanical wear is achieved, effectively preventing glazing while avoiding excessive tool wear, thereby ensuring sustained self-sharpening capability and process stability. Through orthogonal experiment optimization, the best parameter combination for SiC polishing is determined: 4 wt% TEA concentration, 98 N polishing pressure, and 90 rpm rotational speed. This configuration delivers both superior surface quality and desirable <i>MRR</i>. Experimental data confirm that TEA significantly enhances the self-sharpening performance of gel discs through its unique complex reaction. During the rough polishing stage, the <i>MRR</i> increases by 34.9% to 0.85 μm/h, while the surface roughness <i>S<sub>a</sub></i> is reduced by 51.3% to 6.29 nm. After subsequent CMP fine polishing, an ultra-smooth surface with a final roughness of 2.33 nm is achieved. |
|---|---|
| ISSN: | 2072-666X |