Hydrostatic-Pressure Modulation of Band Structure and Elastic Anisotropy in Wurtzite BN, AlN, GaN and InN: A First-Principles DFT Study

Hydrostatic-Pressure Modulation of Band Structure and Elastic Anisotropy in Wurtzite BN, AlN, GaN and InN: A First-Principles DFT Study

III-Nitride semiconductors (BN, AlN, GaN, and InN) exhibit exceptional electronic and mechanical properties that render them indispensable for high-performance optoelectronic, power, and high-frequency device applications. This study implements first-principles Density Functional Theory (DFT) calcul...

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Bibliographic Details
Main Authors: Ilyass Ez-zejjari, Haddou El Ghazi, Walid Belaid, Redouane En-nadir, Hassan Abboudi, Ahmed Sali
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Series:Crystals
Subjects:
III-nitrides
DFT
high-pressure effect
bandgap
mechanical properties
elastic stiffness
Online Access:https://www.mdpi.com/2073-4352/15/7/648
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