A study on matching of Si<sub>3</sub>N<sub>4</sub> substrate for SiC module based on stress difference improvement

The rapid development of power semiconductor devices, especially the widespread application of SiC power modules, has put forward higher requirements for ceramic copper-coated substrate in modules, and the warpage of the substrate in module packaging will affect its reliability. The article studied...

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Bibliographic Details
Main Authors: HUANG Shidong, WANG Gufeng, SHEN Yicong, CHANG Guiqin, LIU Chengchen
Format: Article
Language:zho
Published: Editorial Department of Electric Drive for Locomotives 2023-09-01
Series:机车电传动
Subjects:
Online Access:http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.011
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Summary:The rapid development of power semiconductor devices, especially the widespread application of SiC power modules, has put forward higher requirements for ceramic copper-coated substrate in modules, and the warpage of the substrate in module packaging will affect its reliability. The article studied the stress state of the substrate and the relationship between the stress and the warpage, and provided improvement plans to reduce the warpage, including extending cooling time, reducing peak temperature, and adjusting copper volume ratio to improve the matching between the substrate and SiC module, thereby enhancing module reliability.
ISSN:1000-128X