Highly efficient narrow bandgap Cu(In,Ga)Se2 solar cells with enhanced open circuit voltage for tandem application
Abstract Although an ideal bandgap matching with 0.96 eV and 1.62 eV for a double-junction tandem is hard to realize practically, among all mature photovoltaic systems, Cu(In,Ga)Se2 (CIGSe) can provide the closest bandgap of 1.00 eV for the bottom sub-cell by adjusting its composition. However, pure...
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Nature Portfolio
2024-11-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-54818-6 |
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| author | Junjun Zhang Zengyang Ma Yitian Zhang Xinxing Liu Ruiming Li Qianqian Lin Guojia Fang Xue Zheng Weimin Li Chunlei Yang Jianmin Li Junbo Gong Xudong Xiao |
| author_facet | Junjun Zhang Zengyang Ma Yitian Zhang Xinxing Liu Ruiming Li Qianqian Lin Guojia Fang Xue Zheng Weimin Li Chunlei Yang Jianmin Li Junbo Gong Xudong Xiao |
| author_sort | Junjun Zhang |
| collection | DOAJ |
| description | Abstract Although an ideal bandgap matching with 0.96 eV and 1.62 eV for a double-junction tandem is hard to realize practically, among all mature photovoltaic systems, Cu(In,Ga)Se2 (CIGSe) can provide the closest bandgap of 1.00 eV for the bottom sub-cell by adjusting its composition. However, pure CuInSe2 (CISe) solar cell suffers strong interfacial carrier recombination. We hereby present approaches to introduce appropriate Ga gradients in both the back and front parts of absorber while maintaining the absorption spectrum close to CISe. With an appropriate front Ga gradient, the open circuit voltage can be enhanced by ~30 mV. With a pre-deposited CIGSe layer and a high copper excess deposition during absorber growth, the Ga diffusion can be well suppressed and a wide U-shaped Ga grading with a minimum bandgap of 1.01 eV has been created. Our optimized narrow-bandgap CIGSe solar cell has achieved a certified record PCE of 20.26%, with a record-low open circuit voltage deficit of 368 mV and a record-high contribution of 10% absolute efficiency to a four-terminal tandem. This work demonstrates the potential of controlling gallium diffusion to improve the performance of narrow bandgap CIGSe solar cells for tandem applications. |
| format | Article |
| id | doaj-art-a2de8472f2dd4d95818fcda55d5fab8a |
| institution | OA Journals |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Nature Portfolio |
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| series | Nature Communications |
| spelling | doaj-art-a2de8472f2dd4d95818fcda55d5fab8a2025-08-20T02:08:23ZengNature PortfolioNature Communications2041-17232024-11-0115111110.1038/s41467-024-54818-6Highly efficient narrow bandgap Cu(In,Ga)Se2 solar cells with enhanced open circuit voltage for tandem applicationJunjun Zhang0Zengyang Ma1Yitian Zhang2Xinxing Liu3Ruiming Li4Qianqian Lin5Guojia Fang6Xue Zheng7Weimin Li8Chunlei Yang9Jianmin Li10Junbo Gong11Xudong Xiao12School of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan UniversitySchool of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan UniversitySchool of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan UniversitySchool of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan UniversitySchool of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan UniversitySchool of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan UniversitySchool of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan UniversityShenzhen Institute of Advanced Technology, Chinese Academy of SciencesShenzhen Institute of Advanced Technology, Chinese Academy of SciencesShenzhen Institute of Advanced Technology, Chinese Academy of SciencesSchool of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan UniversitySchool of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan UniversitySchool of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan UniversityAbstract Although an ideal bandgap matching with 0.96 eV and 1.62 eV for a double-junction tandem is hard to realize practically, among all mature photovoltaic systems, Cu(In,Ga)Se2 (CIGSe) can provide the closest bandgap of 1.00 eV for the bottom sub-cell by adjusting its composition. However, pure CuInSe2 (CISe) solar cell suffers strong interfacial carrier recombination. We hereby present approaches to introduce appropriate Ga gradients in both the back and front parts of absorber while maintaining the absorption spectrum close to CISe. With an appropriate front Ga gradient, the open circuit voltage can be enhanced by ~30 mV. With a pre-deposited CIGSe layer and a high copper excess deposition during absorber growth, the Ga diffusion can be well suppressed and a wide U-shaped Ga grading with a minimum bandgap of 1.01 eV has been created. Our optimized narrow-bandgap CIGSe solar cell has achieved a certified record PCE of 20.26%, with a record-low open circuit voltage deficit of 368 mV and a record-high contribution of 10% absolute efficiency to a four-terminal tandem. This work demonstrates the potential of controlling gallium diffusion to improve the performance of narrow bandgap CIGSe solar cells for tandem applications.https://doi.org/10.1038/s41467-024-54818-6 |
| spellingShingle | Junjun Zhang Zengyang Ma Yitian Zhang Xinxing Liu Ruiming Li Qianqian Lin Guojia Fang Xue Zheng Weimin Li Chunlei Yang Jianmin Li Junbo Gong Xudong Xiao Highly efficient narrow bandgap Cu(In,Ga)Se2 solar cells with enhanced open circuit voltage for tandem application Nature Communications |
| title | Highly efficient narrow bandgap Cu(In,Ga)Se2 solar cells with enhanced open circuit voltage for tandem application |
| title_full | Highly efficient narrow bandgap Cu(In,Ga)Se2 solar cells with enhanced open circuit voltage for tandem application |
| title_fullStr | Highly efficient narrow bandgap Cu(In,Ga)Se2 solar cells with enhanced open circuit voltage for tandem application |
| title_full_unstemmed | Highly efficient narrow bandgap Cu(In,Ga)Se2 solar cells with enhanced open circuit voltage for tandem application |
| title_short | Highly efficient narrow bandgap Cu(In,Ga)Se2 solar cells with enhanced open circuit voltage for tandem application |
| title_sort | highly efficient narrow bandgap cu in ga se2 solar cells with enhanced open circuit voltage for tandem application |
| url | https://doi.org/10.1038/s41467-024-54818-6 |
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